STGWA15H120DF2Trench gate field-stop IGBT, H series 1200 V, 15 A high speed | Transistors | 1 | Active | This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high-switching frequency converters. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation. |
| Discrete Semiconductor Products | 1 | Active | This device uses the advanced PowerMESH process resulting in an excellent trade-off between switching performance and low on-state behavior. |
| Transistors | 1 | Active | |
STGWA20H65DFB2Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a TO-247 long leads package | Transistors | 1 | Active | The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. A very fast soft recovery diode is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications. |
STGWA20IH65DFTrench gate field-stop 650 V, 20 A, soft-switching IH series IGBT in a TO-247 long leads package | | 1 | Obsolete | The newest IGBT 650 V soft-switching IH series has been developed using an advanced proprietary trench gate field-stop structure, whose performance is optimized both in conduction and switching losses for soft commutation. A freewheeling diode with a low drop forward voltage is included. The result is a product specifically designed to maximize efficiency for any resonant and soft-switching applications. |
STGWA25Trench gate field-stop IGBT, H series 1200 V, 25 A high speed | Single IGBTs | 3 | Active | This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high-switching frequency converters. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation. |
STGWA25H120F2Trench gate field-stop IGBT, H series 1200 V, 25 A high speed | Single IGBTs | 1 | Active | These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation. |
STGWA25IH135DF2Trench gate field-stop 1350 V, 25 A, soft-switching IH2 series IGBT in a TO-247 long leads package | Transistors | 1 | Active | The newest IGBT 1350 V IH2 series has been developed using an advanced proprietary trench gate field-stop structure, whose performance is optimized both in conduction and switching losses for soft commutation. A freewheeling diode with a low drop forward voltage is included. The result is a product specifically designed to maximize efficiency for any resonant and soft-switching applications. |
STGWA30Trench gate field-stop, 650 V, 30 A, high speed HB2 series IGBT in a TO-247 long leads package | Discrete Semiconductor Products | 6 | Active | The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat)behavior at low current values, as well as in terms of reduced switching energy. A diode used for protection purposes only is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications. |
STGWA30IH65DFTrench gate field-stop 650 V, 30 A, soft-switching IH series IGBT in a TO-247 long leads package | Transistors | 1 | Active | The newest IGBT 650 V soft-switching IH series has been developed using an advanced proprietary trench gate field-stop structure, whose performance is optimized both in conduction and switching losses for soft commutation. A freewheeling diode with a low drop forward voltage is included. The result is a product specifically designed to maximize efficiency for any resonant and soft-switching applications. |
