Catalog
30 A, 600 V, fast IGBT
Description
AI
This device utilizes the advanced PowerMESH process resulting in an excellent trade-off between switching performance and low on-state behavior.
Beta
⌘K
30 A, 600 V, fast IGBT
30 A, 600 V, fast IGBT
| Part | Vce(on) (Max) @ Vge, Ic | Current - Collector (Ic) (Max) [Max] | Package / Case | Current - Collector Pulsed (Icm) | Supplier Device Package | Mounting Type | Td (on/off) @ 25°C [custom] | Td (on/off) @ 25°C [custom] | Switching Energy | Operating Temperature [Max] | Operating Temperature [Min] | Power - Max [Max] | Voltage - Collector Emitter Breakdown (Max) [Max] | Gate Charge | Test Condition |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 STMicroelectronics | 1.9 V | 35 A | TO-3P-3 Full Pack | 150 A | TO-3P | Through Hole | 21.5 ns | 180 ns | 1.28 mJ 300 µJ | 150 °C | -55 °C | 79 W | 600 V | 96 nC | 10 Ohm 15 V 20 A 480 V |