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Product families from PN Junction Semiconductor
| Series | Category | Parts | Status | Description |
|---|---|---|---|---|
Parts that are not part of a series
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Parts from PN Junction Semiconductor that are not part of a series
| Part Information | Pricing (lowest) | Current - Average Rectified (Io) | Technology | Current - Reverse Leakage | Package Name | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Reverse Recovery Time (trr) | Speed - Fast Recovery (Minimum) | Speed | Speed - Recovery Current | Package / Case | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) | Capacitance | Qualification | Rds On (Max) | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Operating Temperature (Min) | Operating Temperature (Max) | Grade | Mounting Type | Vgs(th) (Max) | FET Type | Vgs (Max) Positive | Vgs (Max) Negative | Package Leads | Input Capacitance (Ciss) (Max) | Gate Charge (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 PN Junction Semiconductor DIODE SIL CARB 650V 21A TO220I-2 | Sign in to see pricing | 21 A | SiC (Silicon Carbide) Schottky | 36 µA | TO-220I-2 | 175 °C | -55 °C | 0 ns | 500 mA | No Recovery Time | 500 mA, 500 mA | TO-220I-2 | 650 V | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
 PN Junction Semiconductor DIODE SIL CARB 650V 45A TO220-2 | Sign in to see pricing | 45 A | SiC (Silicon Carbide) Schottky | 100 µA | TO-220-2 | 175 °C | -55 °C | 0 ns | 500 mA | No Recovery Time | 500 mA, 500 mA | TO-220-2 | 650 V | 1.6 V | 904 pF | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
 PN Junction Semiconductor SICFET N-CH 650V 68A TO247-3 | Sign in to see pricing | — | SiCFET (Silicon Carbide) | — | TO-247-3L | — | — | — | — | — | — | TO-247-3 | — | — | — | AEC-Q101 | 50 mOhm | 15 V | 68 A | 254 W | 650 V | -55 °C | 175 °C | Automotive | Through Hole | 2.4 V | N-Channel | 20 V | -8 V | — | — | — |
 PN Junction Semiconductor SICFET N-CH 650V 44A TO-263-7 | Sign in to see pricing | — | SiCFET (Silicon Carbide) | — | D2PAK, D2PAK-7 | — | — | — | — | — | — | — | — | — | — | AEC-Q101 | 79 mOhm | 15 V | 44 A | 159 W | 650 V | -55 °C | 175 °C | Automotive | Surface Mount | 2.2 V | N-Channel | 20 V | -8 V | 7 Leads | — | — |
 PN Junction Semiconductor SICFET N-CH 650V 46A TO220-3 | Sign in to see pricing | — | SiCFET (Silicon Carbide) | — | TO-220-2L | — | — | — | — | — | — | TO-220-2 | — | — | — | AEC-Q101 | 79 mOhm | 15 V | 46 A | 170 W | 650 V | -55 °C | 175 °C | Automotive | Through Hole | 2.2 V | N-Channel | 20 V | -8 V | — | — | — |
 PN Junction Semiconductor SICFET N-CH 650V 9A TO-247-3 | Sign in to see pricing | — | SiCFET (Silicon Carbide) | — | TO-247-3L | — | — | — | — | — | — | TO-247-3 | — | — | — | — | 500 mOhm | 15 V | 9 A, 9 A | 38 W | 650 V | -55 °C | 175 °C | — | Through Hole | 2.2 V | N-Channel | 20 V | -8 V | — | 338 pF, 338 pF | 904 nC |
 PN Junction Semiconductor SICFET N-CH 1200V 112A TO-247-4 | Sign in to see pricing | — | SiCFET (Silicon Carbide) | — | TO-247-4L | — | — | — | — | — | — | TO-247-4 | — | — | — | AEC-Q101 | 35 mOhm | 15 V | 112 A | 577 W | 1200 V | -55 °C | 175 °C | Automotive | Through Hole | 2.2 V | N-Channel | 19 V | -8 V | — | — | — |
 PN Junction Semiconductor SICFET N-CH 1200V 47A TO-247-3 | Sign in to see pricing | — | SiCFET (Silicon Carbide) | — | TO-247-3L | — | — | — | — | — | — | TO-247-3 | — | — | — | AEC-Q101 | 96 mOhm | 15 V | 47 A | 221 W | 1200 V | -55 °C | 175 °C | Automotive | Through Hole | 2.4 V | N-Channel | 21 V | -8 V | — | — | — |
 PN Junction Semiconductor SICFET N-CH 1200V 47A TO-247-4 | Sign in to see pricing | — | SiCFET (Silicon Carbide) | — | TO-247-4L | — | — | — | — | — | — | TO-247-4 | — | — | — | AEC-Q101 | 96 mOhm | 15 V | 47 A | 221 W | 1200 V | -55 °C | 175 °C | Automotive | Through Hole | 2.4 V | N-Channel | 21 V | -8 V | — | — | — |
 PN Junction Semiconductor SICFET N-CH 1200V 19A TO-247-3 | Sign in to see pricing | — | SiCFET (Silicon Carbide) | — | TO-247-3L | — | — | — | — | — | — | TO-247-3 | — | — | — | AEC-Q101 | 192 mOhm | 15 V | 19 A | 110 W | 1200 V | -55 °C | 175 °C | Automotive | Through Hole | 2.4 V | N-Channel | 21 V | -8 V | — | — | — |