Discrete Semiconductor Products
P3D06008I2
ActivePN Junction Semiconductor
DIODE SIL CARB 650V 21A TO220I-2
Discrete Semiconductor Products
P3D06008I2
ActivePN Junction Semiconductor
DIODE SIL CARB 650V 21A TO220I-2
Technical Specifications
Parameters and characteristics for this part
| Specification | P3D06008I2 |
|---|---|
| Current - Average Rectified (Io) | 21 A |
| Current - Reverse Leakage | 36 µA |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -55 °C |
| Package / Case | TO-220I-2 |
| Package Name | TO-220I-2 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Speed - Fast Recovery (Minimum) | 500 mA |
| Speed - Recovery Current | 500 mA, 500 mA |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
CAD
3D models and CAD resources for this part
Description
General part information
P3D06008I2
Diode 650 V 21A TO-220I-2
Documents
Technical documentation and resources