Discrete Semiconductor Products
P3M12025K4
ActivePN Junction Semiconductor
SICFET N-CH 1200V 112A TO-247-4
Discrete Semiconductor Products
P3M12025K4
ActivePN Junction Semiconductor
SICFET N-CH 1200V 112A TO-247-4
Technical Specifications
Parameters and characteristics for this part
| Specification | P3M12025K4 |
|---|---|
| Current - Continuous Drain (Id) | 112 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 15 V |
| FET Type | N-Channel |
| Grade | Automotive |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-247-4 |
| Package Name | TO-247-4L |
| Power Dissipation (Max) | 577 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 35 mOhm |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) Negative | -8 V |
| Vgs (Max) Positive | 19 V |
| Vgs(th) (Max) | 2.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
CAD
3D models and CAD resources for this part
Description
General part information
P3M12025K4
N-Channel 1200 V 112A 577W Through Hole TO-247-4L
Documents
Technical documentation and resources