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P3M06040K3
Discrete Semiconductor Products

P3M06040K3

Active
PN Junction Semiconductor

SICFET N-CH 650V 68A TO247-3

P3M06040K3
Discrete Semiconductor Products

P3M06040K3

Active
PN Junction Semiconductor

SICFET N-CH 650V 68A TO247-3

Technical Specifications

Parameters and characteristics for this part

SpecificationP3M06040K3
Current - Continuous Drain (Id)68 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)15 V
FET TypeN-Channel
GradeAutomotive
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-247-3
Package NameTO-247-3L
Power Dissipation (Max)254 W
QualificationAEC-Q101
Rds On (Max)50 mOhm
TechnologySiCFET (Silicon Carbide)
Vgs (Max) Negative-8 V
Vgs (Max) Positive20 V
Vgs(th) (Max)2.4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated

CAD

3D models and CAD resources for this part

Description

General part information

P3M06040K3

N-Channel 650 V 68A 254W Through Hole TO-247-3L

Documents

Technical documentation and resources