Discrete Semiconductor Products
P3M06060G7
ActivePN Junction Semiconductor
SICFET N-CH 650V 44A TO-263-7
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Discrete Semiconductor Products
P3M06060G7
ActivePN Junction Semiconductor
SICFET N-CH 650V 44A TO-263-7
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | P3M06060G7 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 44 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 15 V |
| FET Type | N-Channel |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-263CA, D2PAK (7 Leads + Tab), TO-263-8 |
| Power Dissipation (Max) [Max] | 159 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 79 mOhm |
| Supplier Device Package | D2PAK-7 |
| Vgs (Max) [Max] | 20 V |
| Vgs (Max) [Min] | -8 V |
| Vgs(th) (Max) @ Id | 2.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.00 | |
Description
General part information
P3M06060G7
SICFET N-CH 650V 44A TO-263-7
Documents
Technical documentation and resources
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