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P3M12080K4
Discrete Semiconductor Products

P3M12080K4

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PN Junction Semiconductor

SICFET N-CH 1200V 47A TO-247-4

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P3M12080K4
Discrete Semiconductor Products

P3M12080K4

Active
PN Junction Semiconductor

SICFET N-CH 1200V 47A TO-247-4

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationP3M12080K4
Current - Continuous Drain (Id) @ 25°C47 A
Drain to Source Voltage (Vdss)1.2 kV
Drive Voltage (Max Rds On, Min Rds On)15 V
FET TypeN-Channel
GradeAutomotive
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-4
Power Dissipation (Max) [Max]221 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs96 mOhm
Supplier Device PackageTO-247-4L
Vgs (Max) [Max]21 V
Vgs (Max) [Min]-8 V
Vgs(th) (Max) @ Id2.4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00

Description

General part information

P3M12080K4

SICFET N-CH 1200V 47A TO-247-4

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