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P3M06300K3
Discrete Semiconductor Products

P3M06300K3

Active
PN Junction Semiconductor

SICFET N-CH 650V 9A TO-247-3

P3M06300K3
Discrete Semiconductor Products

P3M06300K3

Active
PN Junction Semiconductor

SICFET N-CH 650V 9A TO-247-3

Technical Specifications

Parameters and characteristics for this part

SpecificationP3M06300K3
Current - Continuous Drain (Id)9 A, 9 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)15 V
FET TypeN-Channel
Gate Charge (Max)904 nC
Input Capacitance (Ciss) (Max)338 pF, 338 pF
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-247-3
Package NameTO-247-3L
Power Dissipation (Max)38 W
Rds On (Max)500 mOhm
TechnologySiCFET (Silicon Carbide)
Vgs (Max) Negative-8 V
Vgs (Max) Positive20 V
Vgs(th) (Max)2.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyTube 1$ 4.9830d+
11$ 4.73
101$ 4.33
1000$ 3.73

CAD

3D models and CAD resources for this part

Description

General part information

P3M06300K3

N-Channel 650 V 9A 38W Through Hole TO-247-3L

Documents

Technical documentation and resources