
Discrete Semiconductor Products
P3M06300K3
ActivePN Junction Semiconductor
SICFET N-CH 650V 9A TO-247-3

Discrete Semiconductor Products
P3M06300K3
ActivePN Junction Semiconductor
SICFET N-CH 650V 9A TO-247-3
Technical Specifications
Parameters and characteristics for this part
| Specification | P3M06300K3 |
|---|---|
| Current - Continuous Drain (Id) | 9 A, 9 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 15 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 904 nC |
| Input Capacitance (Ciss) (Max) | 338 pF, 338 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-247-3 |
| Package Name | TO-247-3L |
| Power Dissipation (Max) | 38 W |
| Rds On (Max) | 500 mOhm |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) Negative | -8 V |
| Vgs (Max) Positive | 20 V |
| Vgs(th) (Max) | 2.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 4.98 | 30d+ |
| 11 | $ 4.73 | |||
| 101 | $ 4.33 | |||
| 1000 | $ 3.73 | |||
CAD
3D models and CAD resources for this part
Description
General part information
P3M06300K3
N-Channel 650 V 9A 38W Through Hole TO-247-3L
Documents
Technical documentation and resources