FQPF6N80CPower MOSFET, N-Channel, QFET<sup>®</sup>, 800 V, 5.5 A, 2.5 Ω, TO-220F | Single | 13 | Active | This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.. |
FQPF7N65CPower MOSFET, P-Channel, QFET<sup>®</sup>, -200 V, -5.2 A, 690 mΩ, TO-220F | Single | 14 | Active | This P-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. |
FQPF8N60CFPower MOSFET, N-Channel, QFET<sup>®</sup>, FRFET<sup>®</sup>, 600 V, 6.26 A, 1.5 Ω, TO-220F | Single FETs, MOSFETs | 3 | Obsolete | This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. |
FQPF9P25YDTUPower MOSFET, N-Channel, QFET<sup>®</sup>, FRFET<sup>®</sup>, 500 V, 9 A, 800 mΩ, TO-220F | Single | 16 | Active | This P-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. |
FQS4900Dual N & P Channel, Logic Level MOSFET | Transistors | 1 | Active | These dual N and P-channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, planar stripe, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and communication mode. This device is well suited for high interface in telephone sets. |
FQS4903N-Channel QFET<sup>®</sup> MOSFET 500V, 0.37A, 6.2Ω | FET, MOSFET Arrays | 1 | Obsolete | This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. |
FQT13N06LPower MOSFET, N-Channel, Logic Level, QFET<sup>®</sup>, 60 V, 2.8 A, 110 mΩ, SOT-223 | FETs, MOSFETs | 1 | Obsolete | This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. |
FQT1N60CTF-WSPower MOSFET, N-Channel, QFET<sup>®</sup>, 600 V, 0.2 A, 11.5 Ω, SOT-223 | Discrete Semiconductor Products | 1 | LTB | This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. |
FQT2P25P-Channel QFET<sup>®</sup> MOSFET -250 V, -0.55 A, 4.0 Ω | Discrete Semiconductor Products | 1 | Obsolete | These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for highefficiency switching DC/DC converters. |
| FETs, MOSFETs | 2 | Obsolete | |