FQS4900 Series

Dual N & P Channel, Logic Level MOSFET

Catalog

Dual N & P Channel, Logic Level MOSFET

Part	Package / Case	Package / Case [y]	Package / Case [x]	Technology	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Configuration	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Power - Max [Max]
ON Semiconductor FQS4900TF	8-SOIC	3.9 mm	0.154 in	MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	N and P-Channel	2.1 nC	60 V 300 V	1.95 V	550 mOhm	1.3 A 300 mA	8-SOIC	2 W

Catalog

Dual N & P Channel, Logic Level MOSFET

Key Features

• N-Channel1.3 A, 60 VRDS(ON)= 0.55 Ω @ VGS= 10 VRDS(ON)= 0.65 Ω @ VGS= 5 V

• P-Channel-0.3 A, -300 VRDS(ON)= 15.5 Ω @ VGS= -10 VRDS(ON)= 16 Ω @ VGS= -5 V

• Low Gate Charge (Typ. N-Channel 1.6 nC)(Typ. P-Channel 3.6 nC)

• Fast Switching Speed

• Improved dv/dt Capability

Description

These dual N and P-channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, planar stripe, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and communication mode. This device is well suited for high interface in telephone sets.