FQT4 Series

Catalog

MOSFET N-CH 200V 850MA SOT223-4

Part	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Mounting Type	FET Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Package / Case	Vgs (Max)	Technology	Supplier Device Package
ON Semiconductor FQT4N20TF	200 V	2.2 W	6.5 nC	5 V	Surface Mount	N-Channel	850 mA	-55 °C	150 °C	10 V	1.4 Ohm	TO-261-4 TO-261AA	30 V	MOSFET (Metal Oxide)	SOT-223-4
ON Semiconductor FQT4N20TF	200 V	2.2 W	6.5 nC	5 V	Surface Mount	N-Channel	850 mA	-55 °C	150 °C	10 V	1.4 Ohm	TO-261-4 TO-261AA	30 V	MOSFET (Metal Oxide)	SOT-223-4