FQS4903 Series

N-Channel QFET® MOSFET 500V, 0.37A, 6.2Ω

Catalog

N-Channel QFET® MOSFET 500V, 0.37A, 6.2Ω

Part	Package / Case	Package / Case [y]	Package / Case [x]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Power - Max [Max]	Mounting Type	Configuration	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Technology	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor FQS4903TF	8-SOIC	3.9 mm	0.154 in	4 V	370 mA	2 W	Surface Mount	2 N-Channel (Dual)	8.2 nC	500 V	-55 °C	150 °C	6.2 Ohm	MOSFET (Metal Oxide)	8-SOIC	200 pF

Catalog

N-Channel QFET® MOSFET 500V, 0.37A, 6.2Ω

Key Features

• 0.37A, 500V, RDS(on)= 6.2Ω(Max.) @VGS= 10 V, ID= 0.185A

• Low gate charge ( Typ. 6.3nC)

• Low Crss( Typ. 4.5pF)

• 100% avalanche tested

Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.