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FQPF6N80C Series

Power MOSFET, N-Channel, QFET<sup>®</sup>, 800 V, 5.5 A, 2.5 Ω, TO-220F

Manufacturer: ON Semiconductor

Catalog

Power MOSFET, N-Channel, QFET<sup>®</sup>, 800 V, 5.5 A, 2.5 Ω, TO-220F

PartDrive Voltage (Max Rds On, Min Rds On)Vgs(th) (Max) @ IdVgs (Max)TechnologyGate Charge (Qg) (Max) @ Vgs [Max]Drain to Source Voltage (Vdss)Input Capacitance (Ciss) (Max) @ VdsOperating Temperature [Min]Operating Temperature [Max]Supplier Device PackageCurrent - Continuous Drain (Id) @ 25°CMounting TypePackage / CasePower Dissipation (Max)FET TypeGate Charge (Qg) (Max) @ Vgs [x]Rds On (Max) @ Id, Vgs [Max]Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ Vds [Max]Power Dissipation (Max) [Max]
TO-220F
ON Semiconductor
FQPF6N70
10 V
5 V
30 V
MOSFET (Metal Oxide)
40 nC
700 V
1400 pF
-55 °C
150 °C
TO-220F-3
3.5 A
Through Hole
TO-220-3 Full Pack
48 W
N-Channel
TO-220F
ON Semiconductor
FQPF6N40CT
10 V
4 V
30 V
MOSFET (Metal Oxide)
400 V
625 pF
-55 °C
150 °C
TO-220F-3
6 A
Through Hole
TO-220-3 Full Pack
38 W
N-Channel
20 nC
1 Ohm
TO-220F
ON Semiconductor
FQPF6N70
10 V
5 V
30 V
MOSFET (Metal Oxide)
40 nC
700 V
1400 pF
-55 °C
150 °C
TO-220F-3
3.5 A
Through Hole
TO-220-3 Full Pack
48 W
N-Channel
INFINFIPAN60R360PFD7SXKSA1
ON Semiconductor
FQPF6P25
10 V
5 V
30 V
MOSFET (Metal Oxide)
27 nC
250 V
780 pF
-55 °C
150 °C
TO-220F-3
4.2 A
Through Hole
TO-220-3 Full Pack
45 W
P-Channel
1.1 Ohm
onsemi-FJPF13007H1TTU GP BJT Trans GP BJT NPN 400V 8A 40000mW 3-Pin(3+Tab) TO-220FP Tube
ON Semiconductor
FQPF6N80C
10 V
5 V
30 V
MOSFET (Metal Oxide)
800 V
-55 °C
150 °C
TO-220F-3
5.5 A
Through Hole
TO-220-3 Full Pack
51 W
N-Channel
2.5 Ohm
30 nC
1310 pF
TO-220F-3
ON Semiconductor
FQPF630
10 V
4 V
25 V
MOSFET (Metal Oxide)
25 nC
200 V
550 pF
-55 °C
150 °C
TO-220F-3
6.3 A
Through Hole
TO-220-3 Full Pack
38 W
N-Channel
400 mOhm
TO-220F
ON Semiconductor
FQPF6N90C
10 V
5 V
30 V
MOSFET (Metal Oxide)
40 nC
900 V
1770 pF
-55 °C
150 °C
TO-220F-3
6 A
Through Hole
TO-220-3 Full Pack
N-Channel
2.3 Ohm
56 W
TO-220F-3
ON Semiconductor
FQPF630
10 V
4 V
25 V
MOSFET (Metal Oxide)
25 nC
200 V
550 pF
-55 °C
150 °C
TO-220F-3
6.3 A
Through Hole
TO-220-3 Full Pack
38 W
N-Channel
400 mOhm
TO-220F
ON Semiconductor
FQPF6N25
10 V
5 V
30 V
MOSFET (Metal Oxide)
8.5 nC
250 V
-55 °C
150 °C
TO-220F-3
4 A
Through Hole
TO-220-3 Full Pack
N-Channel
1 Ohm
300 pF
37 W
TO-220F
ON Semiconductor
FQPF6N40C
10 V
4 V
30 V
MOSFET (Metal Oxide)
400 V
625 pF
-55 °C
150 °C
TO-220F-3
6 A
Through Hole
TO-220-3 Full Pack
38 W
N-Channel
20 nC
1 Ohm

Key Features

• 6.3A, 200V, RDS(on)= 400mΩ(Max.) @VGS= 10 V, ID= 3.15A
• Low gate charge ( Typ. 19nC)
• Low Crss( Typ. 35pF)
• 100% avalanche tested

Description

AI
This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts..