FQT1N60CTF-WS Series

Power MOSFET, N-Channel, QFET®, 600 V, 0.2 A, 11.5 Ω, SOT-223

Catalog

Power MOSFET, N-Channel, QFET®, 600 V, 0.2 A, 11.5 Ω, SOT-223

Part	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Technology	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	FET Type	Supplier Device Package
ON Semiconductor FQT1N60CTF-WS	4 V	-55 °C	150 °C	TO-261-4 TO-261AA	Surface Mount	170 pF	30 V	200 mA	10 V	MOSFET (Metal Oxide)	11.5 Ohm	6.2 nC	2.1 W	600 V	N-Channel	SOT-223-4

Catalog

Power MOSFET, N-Channel, QFET®, 600 V, 0.2 A, 11.5 Ω, SOT-223

Key Features

• 0.2A, 600V, RDS(on)= 9.3Ω(Typ.) @VGS= 10 V, ID= 0.1A

• Low gate charge ( Typ. 4.8nC)

• Low Crss( Typ. 3.5pF)

• 100% avalanche tested

• RoHS compliant

Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.