FQT2P25 Series

P-Channel QFET® MOSFET -250 V, -0.55 A, 4.0 Ω

Catalog

P-Channel QFET® MOSFET -250 V, -0.55 A, 4.0 Ω

Part	Power Dissipation (Max)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Technology	Package / Case
ON Semiconductor FQT2P25TF	2.5 W	Surface Mount	550 mA	250 V	-55 °C	150 °C	8.5 nC	5 V	SOT-223-4	10 V	P-Channel	250 pF	30 V	MOSFET (Metal Oxide)	TO-261-4 TO-261AA

Catalog

P-Channel QFET® MOSFET -250 V, -0.55 A, 4.0 Ω

Key Features

-0.55 A, -250 V, RDS(on)= 4.0 Ω (Max.) @ VGS= -10 V, ID= -0.275 A

• Low Gate Charge (Typ. 6.5 nC)

• Low Crss (Typ. 6.5 pF)

• 100% Avalanche Tested

Description

These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for highefficiency switching DC/DC converters.