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ON Semiconductor

Series	Category	# Parts	Status	Description

Part	Spec A	Spec B	Spec C	Spec D	Description

Standalone parts(10272)

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Part	Category	Description
ON Semiconductor NCV8402AMNWT1G	Integrated Circuits (ICs)	SELF-PROTECTED N-CHANNEL POWER MOSFET/ REEL
ON Semiconductor 74AC32PCObsolete	Integrated Circuits (ICs)	IC GATE OR 4CH 2-INP 14MDIP
ON Semiconductor FGI3236-F085	Discrete Semiconductor Products	IGBT, 360V, 27A, 1.32V, 320MJ, TO-262<BR>ECOSPARK® I, N-CHANNEL IGNITION
ON Semiconductor FAN1655MTFXObsolete	Integrated Circuits (ICs)	IC REG CTRLR DDR 1OUT 16TSSOP
ON Semiconductor FIN1027MObsolete	Integrated Circuits (ICs)	LVDS DRIVER, LVDS DIFFERENTIAL DRIVER, -40 °C, 85 °C, 3 V, 3.6 V, SOIC
ON Semiconductor TMC2111AR3C	Integrated Circuits (ICs)	PIPELINE REGISTER, 8-BIT PQCC28
ON Semiconductor SLV4HC4053ADWRGObsolete	Integrated Circuits (ICs)	LDO REGULATOR, ULTRA-LOW NOISE,
ON Semiconductor FOD4218V	Isolators	OPTOCOUPLER, DIP, 6 PINS, 5 KV, NON ZERO CROSSING, 800 V, FOD4218 SERIES
ON Semiconductor NVMFD5483NLT1GObsolete	Discrete Semiconductor Products	DUAL N-CHANNEL POWER MOSFET 60V, 24A, 36MΩ
ON Semiconductor 2SD1804S-TL-E	Discrete Semiconductor Products	BIP NPN 8A 50V

Series	Category	# Parts	Status	Description

FQA11N90-F109Power MOSFET, N-Channel, QFET<sup>®</sup>, 900V, 11.4A, 960mΩ, TO-3P	Single FETs, MOSFETs	1	Active	This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
FQA13N50C-F109Power MOSFET, N-Channel, QFET<sup>®</sup>, 500 V, 13.5 A, 480 mΩ, TO-3P	Single	2	Active	These N-Channel enhancement mode power field effect transistors are produced using a proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
FQA170N06Power MOSFET, N-Channel, QFET<sup>®</sup>, 60 V, 170 A, 5.6 mΩ, TO-3P	Transistors	1	Obsolete	This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
FQA19N60Power MOSFET, N-Channel, QFET<sup>®</sup>, 600 V, 18.5 A, 380 mΩ, TO-3P	Transistors	1	Obsolete	This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
FQA24N60Power MOSFET, N-Channel, QFET<sup>®</sup>, 600V, 23.5A, 240mΩ, TO-3P	FETs, MOSFETs	1	Active	This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
FQA27N25Power MOSFET, N-Channel, QFET<sup>®</sup>, 250 V, 2.7 A, 110 mΩ, TO-3P	FETs, MOSFETs	2	Active	This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
FQA28N50Power MOSFET, N-Channel, QFET<sup>®</sup>, 500 V, 28.4 A, 160 mΩ, TO-3P	Single	5	Obsolete	These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.
FQA32N20CPower MOSFET, N-Channel, QFET<sup>®</sup>, 200 V, 32 A, 82 mΩ, TO-3P	FETs, MOSFETs	1	Obsolete	This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
FQA36P15Power MOSFET, P-Channel, QFET<sup>®</sup>, -150 V, -36 A, 90 mΩ, TO-3P	FETs, MOSFETs	1	Active	This P-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
FQA38N30N-Channel QFET<sup>®</sup> MOSFET 300 V, 38.4 A, 85 mΩ	Transistors	7	Obsolete	These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.