FQA27N25 Series

Power MOSFET, N-Channel, QFET®, 250 V, 2.7 A, 110 mΩ, TO-3P

Catalog

Power MOSFET, N-Channel, QFET®, 250 V, 2.7 A, 110 mΩ, TO-3P

Part	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Technology	Mounting Type
ON Semiconductor FQA27N25	30 V	27 A	TO-3PN	65 nC	N-Channel	2450 pF	SC-65-3 TO-3P-3	10 V	250 V	5 V	210 W	-55 °C	150 °C	110 mOhm	MOSFET (Metal Oxide)	Through Hole
ON Semiconductor FQA27N25	30 V	27 A	TO-3PN	65 nC	N-Channel	2450 pF	SC-65-3 TO-3P-3	10 V	250 V	5 V	210 W	-55 °C	150 °C	110 mOhm	MOSFET (Metal Oxide)	Through Hole

Catalog

Power MOSFET, N-Channel, QFET®, 250 V, 2.7 A, 110 mΩ, TO-3P

Key Features

• 27A, 250VRDS(on)= 110mΩ(Max.) @VGS= 10 V, ID= 13.5A

• Low gate charge ( Typ. 50nC)

• Low Crss( Typ. 45pF)

• 100% avalanche tested

Description

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.