FQA170N06 Series

Power MOSFET, N-Channel, QFET®, 60 V, 170 A, 5.6 mΩ, TO-3P

Catalog

Power MOSFET, N-Channel, QFET®, 60 V, 170 A, 5.6 mΩ, TO-3P

Part	Drain to Source Voltage (Vdss)	Technology	Supplier Device Package	Mounting Type	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Vgs(th) (Max) @ Id
ON Semiconductor FQA170N06	60 V	MOSFET (Metal Oxide)	TO-3PN	Through Hole	375 W	10 V	290 nC	5.6 mOhm	-55 °C	175 ░C	N-Channel	25 V	9350 pF	SC-65-3 TO-3P-3	4 V

Catalog

Power MOSFET, N-Channel, QFET®, 60 V, 170 A, 5.6 mΩ, TO-3P

Key Features

• 170A, 60VRDS(on)= 5.6 mΩ(Max.) @VGS= 10 V, ID= 85 A

• Low gate charge ( Typ. 220nC)

• Low Crss( Typ. 620pF)

• 100% avalanche tested

• 175°C maximum junction temperature rating

Description

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.