FQA24N60 Series

Power MOSFET, N-Channel, QFET®, 600V, 23.5A, 240mΩ, TO-3P

Catalog

Power MOSFET, N-Channel, QFET®, 600V, 23.5A, 240mΩ, TO-3P

Part	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Package / Case	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Technology	Drain to Source Voltage (Vdss)	Vgs (Max)
ON Semiconductor FQA24N60	10 V	Through Hole	SC-65-3 TO-3P-3	240 mOhm	-55 °C	150 °C	TO-3PN	5 V	310 W	23.5 A	5500 pF	145 nC	N-Channel	MOSFET (Metal Oxide)	600 V	30 V

Catalog

Power MOSFET, N-Channel, QFET®, 600V, 23.5A, 240mΩ, TO-3P

Key Features

• 23.5A, 600VRDS(on)= 240mΩ(Max.) @VGS= 10 V, ID= 11.8A

• Low gate charge ( Typ. 110nC)

• Low Crss( Typ. 56pF)

• 100% avalanche tested

Description

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.