FQA19N60 Series

Power MOSFET, N-Channel, QFET®, 600 V, 18.5 A, 380 mΩ, TO-3P

Catalog

Power MOSFET, N-Channel, QFET®, 600 V, 18.5 A, 380 mΩ, TO-3P

Part	Package / Case	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	FET Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Vgs(th) (Max) @ Id
ON Semiconductor FQA19N60	SC-65-3 TO-3P-3	18.5 A	380 mOhm	3600 pF	MOSFET (Metal Oxide)	10 V	90 nC	TO-3PN	N-Channel	30 V	600 V	300 W	-55 °C	150 °C	Through Hole	5 V

Catalog

Power MOSFET, N-Channel, QFET®, 600 V, 18.5 A, 380 mΩ, TO-3P

Key Features

• 18.5A, 600VRDS(on)= 380mΩ(Max.) @VGS= 10 V, ID= 9.3A

• Low gate charge ( Typ. 70nC)

• Low Crss( Typ. 35pF)

• 100% avalanche tested

Description

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.