FQA13N50C-F109 Series

Power MOSFET, N-Channel, QFET®, 500 V, 13.5 A, 480 mΩ, TO-3P

Catalog

Power MOSFET, N-Channel, QFET®, 500 V, 13.5 A, 480 mΩ, TO-3P

Part	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)
ON Semiconductor FQA13N80-F109	N-Channel	3500 pF	SC-65-3 TO-3P-3	30 V	88 nC	10 V	800 V	300 W	TO-3PN	750 mOhm	Through Hole	12.6 A	5 V	MOSFET (Metal Oxide)	-55 °C	150 °C
ON Semiconductor FQA13N50C-F109	N-Channel	2055 pF	SC-65-3 TO-3P-3	30 V	56 nC	10 V	500 V		TO-3P	480 mOhm	Through Hole		4 V	MOSFET (Metal Oxide)	-55 °C	150 °C	218 W

Catalog

Power MOSFET, N-Channel, QFET®, 500 V, 13.5 A, 480 mΩ, TO-3P

Key Features

• 13.5 A, 500 VRDS(on)= 480 mΩ (Max.) @ VGS= 10 V, ID= 6.75 A

• Low Gate Charge (Typ. 43 nC)

• Low Crss(Typ. 20 pF)

• 100% Avalanche Tested

• Improved dv/dt Capability

Description

These N-Channel enhancement mode power field effect transistors are produced using a proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.