FQA28N50 Series

Power MOSFET, N-Channel, QFET®, 500 V, 28.4 A, 160 mΩ, TO-3P

Catalog

Power MOSFET, N-Channel, QFET®, 500 V, 28.4 A, 160 mΩ, TO-3P

Part	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	FET Type	Package / Case	Mounting Type	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Vgs(th) (Max) @ Id	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Power Dissipation (Max) [Max]
ON Semiconductor FQA24N50	10 V	-55 °C	150 °C	200 mOhm	24 A	N-Channel	SC-65-3 TO-3P-3	Through Hole	30 V	4500 pF	MOSFET (Metal Oxide)	5 V	TO-3P	120 nC	500 V	290 W
ON Semiconductor FQA24N50_F109	10 V	-55 °C	150 °C	200 mOhm	24 A	N-Channel	SC-65-3 TO-3P-3	Through Hole	30 V	4500 pF	MOSFET (Metal Oxide)	5 V	TO-3P	120 nC	500 V	290 W
ON Semiconductor FQA24N50F	10 V	-55 °C	150 °C	200 mOhm	24 A	N-Channel	SC-65-3 TO-3P-3	Through Hole	30 V	4500 pF	MOSFET (Metal Oxide)	5 V	TO-3P	120 nC	500 V	290 W
ON Semiconductor FQA28N50F	10 V	-55 °C	150 °C	160 mOhm	28.4 A	N-Channel	SC-65-3 TO-3P-3	Through Hole	30 V	5600 pF	MOSFET (Metal Oxide)	5 V	TO-3P	140 nC	500 V		310 W
ON Semiconductor FQA28N50	10 V	-55 °C	150 °C	160 mOhm	28.4 A	N-Channel	SC-65-3 TO-3P-3	Through Hole	30 V	5600 pF	MOSFET (Metal Oxide)	5 V	TO-3P	140 nC	500 V		310 W

Catalog

Power MOSFET, N-Channel, QFET®, 500 V, 28.4 A, 160 mΩ, TO-3P

Key Features

• 28.4 A, 500 V, RDS(on)= 160 mΩ (Max.) @ VGS= 10 V, ID= 14.2 A

• Low Gate Charge (Typ. 110 nC)

• Low Crss (Typ. 60 pF)

• 100% Avalanche Tested

• RoHS compliant

Description

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.