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ON Semiconductor
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Part | Category | Description |
|---|---|---|
ON Semiconductor | Integrated Circuits (ICs) | SELF-PROTECTED N-CHANNEL POWER MOSFET/ REEL |
ON Semiconductor 74AC32PCObsolete | Integrated Circuits (ICs) | IC GATE OR 4CH 2-INP 14MDIP |
ON Semiconductor | Discrete Semiconductor Products | IGBT, 360V, 27A, 1.32V, 320MJ, TO-262<BR>ECOSPARK® I, N-CHANNEL IGNITION |
ON Semiconductor FAN1655MTFXObsolete | Integrated Circuits (ICs) | IC REG CTRLR DDR 1OUT 16TSSOP |
ON Semiconductor FIN1027MObsolete | Integrated Circuits (ICs) | LVDS DRIVER, LVDS DIFFERENTIAL DRIVER, -40 °C, 85 °C, 3 V, 3.6 V, SOIC |
ON Semiconductor | Integrated Circuits (ICs) | PIPELINE REGISTER, 8-BIT PQCC28 |
ON Semiconductor SLV4HC4053ADWRGObsolete | Integrated Circuits (ICs) | LDO REGULATOR, ULTRA-LOW NOISE, |
ON Semiconductor | Isolators | OPTOCOUPLER, DIP, 6 PINS, 5 KV, NON ZERO CROSSING, 800 V, FOD4218 SERIES |
ON Semiconductor NVMFD5483NLT1GObsolete | Discrete Semiconductor Products | DUAL N-CHANNEL POWER MOSFET 60V, 24A, 36MΩ |
ON Semiconductor | Discrete Semiconductor Products | BIP NPN 8A 50V |
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Isolators | 1 | NRND | ||
FOD814A4-Pin DIP Phototransistor Optocouplers | Transistor, Photovoltaic Output | 10 | Active | The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package. |
| Optoisolators | 3 | Obsolete | ||
FOD8160High Noise Immunity, 3.3 V / 5 V, 10 Mbit/sec, Logic Gate Optocoupler | Transistor, Photovoltaic Output Optoisolators | 6 | Active | The FOD8160 is a 3.3 V / 5 V high-speed logic gate optocoupler with open collector output, which supports isolated communications to allow digital signals to communicate between systems without conducting ground loops or hazardous voltages. It utilizes ON Semiconductor’s prioprietary Optoplanar® coplanar packaging technology and optimized IC design to achieve high noise immunity, characterized by high common mode rejection specifications.The FOD8160, packaged in a wide-body SOP 5-Pin package, consists of an aluminium gallium arsenide (AlGaAs) LED and an integrated high-speed photodetector. The output of the detector IC is an open collector Schottky-clamped transistor. The electrical and switching characteristics are guaranteed over the extended industrial temperature range of -40°C to 100°C and a VCCrange of 3 V to 5.5 V. |
FOD81633.3 V / 5 V, 10 Mbit/sec, Logic Gate Optocoupler in Stretched Body SOP 6-Pin | Logic Output Optoisolators | 2 | Active | The FOD8163 series is a 3.3 V / 5 V high-speed logic gate optocoupler with open-collector output, which supports isolated communications allowing digital signals to communicate between systems without conducting ground loops or hazardous voltages.The FOD8163 series utilizes stretched body package to achieve 8 mm creepage and clearance distances (FOD8163T), and optimized IC design to achieve reliably high-insulation voltage and high-noise immunity.The FOD8163 series consists of an aluminium gallium arsenide (AlGaAs) light emitting diode and an integrated high-speed photodetector. The output of the detector IC is an open collector schottky-clamped transistor. The electrical and switching characteristics are guaranteed over the extended industrial temperature range of -40°C to 100°C and a VCC range of 3 V to 5.5 V. |
| Logic Output Optoisolators | 2 | Active | ||
FOD817D4-Pin DIP Phototransistor Optocouplers | Optocouplers, Optoisolators | 30 | Active | The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package. |
FOD819Phototransistor Optocouplers, High Speed, 4-Pin DIP | Transistor, Photovoltaic Output Optoisolators | 2 | Obsolete | The FOD819 consists of a gallium arsenide (GaAs) infra-red emitting diode, driving a high speed photo detector with integrated base-to-emitter resistor, RBE, in a 4-pin dual-in-line package. It is designed to be an improved replacement to the popular FOD817 Series when higher speed performance is required in isolated data signal transmission. |
FOD83141.0 A Output Current, Gate Drive Optocoupler in Stretched Body SOP 6-Pin | Isolators - Gate Drivers | 2 | Active | The FOD8314 series is a 1.0 A output current gate drive optocoupler, capable of driving medium-power IGBT/MOSFETs. It is ideally suited for fast-switching driving of power IGBT and MOSFET used in motor-control inverter applications, and high-performance power systems.The FOD8314 series utilizes stretched body package to achieve 8 mm creepage and clearance distances (FOD8314T), and optimized IC design to achieve reliably high-insulation voltage and high-noise immunity.The FOD8314 series consists of an Aluminum Gallium Arsenide (AlGaAs) Light-Emitting Diode (LED) optically coupled to an integrated circuit with a high-speed driver for push-pull MOSFET output stage. The device is housed in a stretched body, 6-pin, small outline, plastic package. |
FOD83162.5A Output Current, IGBT Drive Optocoupler with Desaturation Detection and Isolated Fault Sensing | Isolators | 3 | Active | The FOD8316 is an advanced 2.5A Output Current IGBT Drive Optocoupler, capable of driving most 1200V/ 150A IGBTs. It is ideally suited for fast switching driving of power IGBTs and MOSFETs used in motor control inverter applications and high performance power systems. It offers critical protection features necessary for preventing fault conditions that lead to destructive thermal runaway of IGBTs.It utilizes ON Semiconductor’s patented coplanar packaging technology, Optoplanar®, and optimized IC design to achieve high noise immunity, characterized by high common mode rejection and power supply rejection specifications.It consists of an integrated gate drive optocoupler featuring low RDS(ON)CMOS transistors to drive the IGBT from rail to rail and an integrated high speed isolated feedback for fault sensing. The device is housed in a compact 16-pin small outline plastic package which meets the 8mm creepage and clearance requirements. |