FOD814A Series

4-Pin DIP Phototransistor Optocouplers

Catalog

4-Pin DIP Phototransistor Optocouplers

Part	Supplier Device Package	Current - DC Forward (If) (Max)	Current - Output / Channel	Number of Channels	Mounting Type	Current Transfer Ratio (Min) [Min]	Operating Temperature [Max]	Operating Temperature [Min]	Vce Saturation (Max)	Output Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Package / Case	Current Transfer Ratio (Max) [Max]	Voltage - Output (Max) [Max]	Current Transfer Ratio (Max)
ON Semiconductor FOD814AS	4-SMD	50 mA	50 mA	1	Surface Mount	50 %	105 ░C	-55 °C	200 mV	1.81 mOhm	3 µs	4 µs	4-SMD Gull Wing	150 %	70 V
ON Semiconductor FOD814	4-DIP	50 mA	50 mA	1	Through Hole	20 %	105 ░C	-55 °C	200 mV	1.81 mOhm	3 µs	4 µs	4-DIP (0.300" 7.62mm)		70 V	300 %
ON Semiconductor FOD814A3SD	4-SMD	50 mA	50 mA	1	Surface Mount	50 %	105 ░C	-55 °C	200 mV	1.81 mOhm	3 µs	4 µs	4-SMD Gull Wing	150 %	70 V
ON Semiconductor FOD814A300	4-DIP	50 mA	50 mA	1	Through Hole	50 %	105 ░C	-55 °C	200 mV	1.81 mOhm	3 µs	4 µs	4-DIP (0.300" 7.62mm)	150 %	70 V
ON Semiconductor FOD814SD	4-SMD	50 mA	50 mA	1	Surface Mount	20 %	105 ░C	-55 °C	200 mV	1.81 mOhm	3 µs	4 µs	4-SMD Gull Wing		70 V	300 %
ON Semiconductor FOD814S	4-SMD	50 mA	50 mA	1	Surface Mount	20 %	105 ░C	-55 °C	200 mV	1.81 mOhm	3 µs	4 µs	4-SMD Gull Wing		70 V	300 %
ON Semiconductor FOD8143SD	4-SMD	50 mA	50 mA	1	Surface Mount	20 %	105 ░C	-55 °C	200 mV	1.81 mOhm	3 µs	4 µs	4-SMD Gull Wing		70 V	300 %
ON Semiconductor FOD814300W	4-DIP	50 mA	50 mA	1	Through Hole	20 %	105 ░C	-55 °C	200 mV	1.81 mOhm	3 µs	4 µs	4-DIP		70 V	300 %
ON Semiconductor FOD814ASD	4-SMD	50 mA	50 mA	1	Surface Mount	50 %	105 ░C	-55 °C	200 mV	1.81 mOhm	3 µs	4 µs	4-SMD Gull Wing	150 %	70 V
ON Semiconductor FOD814W	4-DIP	50 mA	50 mA	1	Through Hole	20 %	105 ░C	-55 °C	200 mV	1.81 mOhm	3 µs	4 µs	4-DIP		70 V	300 %

Catalog

4-Pin DIP Phototransistor Optocouplers

Key Features

• AC Input Response (FOD814)

• Current Transfer Ratio in Selected Groups:

• FOD617A: 40-80%

• FOD617B: 63-125%

• FOD617C: 100-200%

• FOD617D: 160-320%

• FOD814: 20-300%

• FOD814A: 50-150%

• FOD817: 50-600%

• FOD817A: 80-160%

• FOD817B: 130-260%

• FOD817C: 200-400%

• FOD817D: 300-600%

• Minimum BVCEO of 70 V Guaranteed

• UL1577, 5,000 VACRMSfor 1 Minute

• Safety and Regulatory Approvals

• DIN EN/IEC60747-5-5

Description

The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.