FOD819 Series

Phototransistor Optocouplers, High Speed, 4-Pin DIP

Catalog

Phototransistor Optocouplers, High Speed, 4-Pin DIP

Part	Mounting Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Output Type	Number of Channels	Current - DC Forward (If) (Max)	Supplier Device Package	Current - Output / Channel	Current Transfer Ratio (Min) [Min]	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Vce Saturation (Max) [Max]	Current Transfer Ratio (Max) [Max]	Turn On / Turn Off Time (Typ) [custom]	Turn On / Turn Off Time (Typ) [custom]
ON Semiconductor FOD819	Through Hole	12 µs	20 µs	1.81 mOhm	1	50 mA	4-PDIP	30 mA	100 %	4-DIP (0.300" 7.62mm)	-55 °C	110 °C	300 mV	600 %	18 µs	18 µs
ON Semiconductor FOD819S	Surface Mount	12 µs	20 µs	1.81 mOhm	1	50 mA	4-SMD	30 mA	100 %	4-SMD Gull Wing	-55 °C	110 °C	300 mV	600 %	18 µs	18 µs

Catalog

Phototransistor Optocouplers, High Speed, 4-Pin DIP

Key Features

• High Speed Performance ~ 30kHz

• Current Transfer Ratio: 100% to 600%

• Minimum BVCEOof 80V Guaranteed

• Safety and Regulatory Approvals:

• UL1577, 5,000 VACRMSfor 1 Minute

• DIN EN/IEC60747-5-5, 850V Peak Working Insulation Voltage

Description

The FOD819 consists of a gallium arsenide (GaAs) infra-red emitting diode, driving a high speed photo detector with integrated base-to-emitter resistor, RBE, in a 4-pin dual-in-line package. It is designed to be an improved replacement to the popular FOD817 Series when higher speed performance is required in isolated data signal transmission.