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ON Semiconductor
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Part | Category | Description |
|---|---|---|
ON Semiconductor | Integrated Circuits (ICs) | SELF-PROTECTED N-CHANNEL POWER MOSFET/ REEL |
ON Semiconductor 74AC32PCObsolete | Integrated Circuits (ICs) | IC GATE OR 4CH 2-INP 14MDIP |
ON Semiconductor | Discrete Semiconductor Products | IGBT, 360V, 27A, 1.32V, 320MJ, TO-262<BR>ECOSPARK® I, N-CHANNEL IGNITION |
ON Semiconductor FAN1655MTFXObsolete | Integrated Circuits (ICs) | IC REG CTRLR DDR 1OUT 16TSSOP |
ON Semiconductor FIN1027MObsolete | Integrated Circuits (ICs) | LVDS DRIVER, LVDS DIFFERENTIAL DRIVER, -40 °C, 85 °C, 3 V, 3.6 V, SOIC |
ON Semiconductor | Integrated Circuits (ICs) | PIPELINE REGISTER, 8-BIT PQCC28 |
ON Semiconductor SLV4HC4053ADWRGObsolete | Integrated Circuits (ICs) | LDO REGULATOR, ULTRA-LOW NOISE, |
ON Semiconductor | Isolators | OPTOCOUPLER, DIP, 6 PINS, 5 KV, NON ZERO CROSSING, 800 V, FOD4218 SERIES |
ON Semiconductor NVMFD5483NLT1GObsolete | Discrete Semiconductor Products | DUAL N-CHANNEL POWER MOSFET 60V, 24A, 36MΩ |
ON Semiconductor | Discrete Semiconductor Products | BIP NPN 8A 50V |
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
FOD8524-Pin DIP Photodarlington Output Optocoupler | Optoisolators | 3 | Active | The FOD852 consists of gallium arsenide infrared emitting diode driving a silicon photodarlington output (with integral base-emitter resistor) in a 4-pin dual in-line package. |
FOD8802ADual Channel OptoHiT™ Series, High-Temperature Phototransistor Optocoupler In Small Outline 8-Pin Package | Isolators | 4 | Active | The FOD8802 dual channel optocoupler is a first-of-kind phototransistor, utilizing ON Semiconductor’s leading-edge proprietary process technology to achieve high operating temperature characteristics, up to 125°C. It consists of two aluminum gallium arsenide (AlGaAs) infrared light emitting diode optically coupled to two phototransistors, in a small outline, 8-pin SOIC package. It delivers high current transfer ratio at very low input current. The input-output isolation voltage, Viso, is rated at 2500 VACRMS. |
| Transistor, Photovoltaic Output | 4 | Obsolete | ||
FODM1008Single Channel, DC Sensing Input, Phototransistor Optocoupler In Stretched Body SOP 4-Pin | Optocouplers, Optoisolators | 4 | Active | The FODM100x Series, single channel, DC sensing input, optocoupler consists of one gallium arsenide (GaAs) infrared light emitting diode optically coupled to one phototransistor, in a stretched body SOP 4-pin package. The input-output isolation voltage, VISO, is rated at 5,000 VACRMS |
| Optocouplers, Optoisolators | 21 | Active | ||
FODM214Single Channel, AC Sensing Input, Phototransistor Optocoupler In Half-Pitch Mini-Flat 4-Pin Package | Transistor, Photovoltaic Output Optoisolators | 4 | Active | The FODM214 Series a single channel, AC sensing input, optocoupler consists of two gallium arsenide (GaAs) infrared emitting diodes connected in inverse parallel optically coupled to one phototransistor, in a compact, half-pitch, mini-flat, 4-pin package. The input-output isolation voltage, VISO, is rated at 3,750 VACRMS. |
FODM217DSingle Channel, DC Sensing Input, Phototransistor Optocoupler In Half-Pitch Mini-Flat 4-Pin Package | Transistor, Photovoltaic Output | 8 | Active | The FODM217 Series single channel, DC sensing input, optocoupler consists of one gallium arsenide (GaAs) infrared light emitting diode optically coupled to one phototransistor, in a compact, half-pitch, mini-flat, 4-pin package. The input-output isolation voltage, VISO, is rated at 3,750 VACRMS. |
FODM27054-Pin Full Pitch Mini-Flat Package Phototransistor Optocouplers | Transistor, Photovoltaic Output | 12 | Active | The FODM121 series, FODM124, and FODM2701 consists of a gallium arsenide infrared emitting diode driving a phototransistor in a compact 4-pin mini-flat package. The lead pitch is 2.54 mm. The FODM2705 consists of two gallium arsenide infrared emitting diodes connected in inverse parallel for AC operation. |
FODM3012_NF098Triac Driver, Random Phase, 250V, 5mA | Triac, SCR Output | 92 | Active | The FODM306X and FODM308X series consist of an infrared emitting diode optically coupled to a monolithic silicon detector performing the function of a zero voltage crossing bilateral triac driver, and is housed in a compact 4-pin mini-flat package. The lead pitch is 2.54mm. They are designed for use with a triac in the interface of logic systems to equipment powered from 115/240 VAC lines, such as solid state relays, industrial controls, motors, solenoids and consumer appliances. |
FODM352Photodarlington Optocoupler with a Base-Emitter Resistor | Transistor, Photovoltaic Output Optoisolators | 1 | Active | The FODM352 consists of one gallium arsenide (GaAs) infraredlight emitting diode, optically coupled to a photodarlington outputwith a base−emitter resistor, in a compact, mini−flat, 4−pin package.The input−output isolation voltage, VISO, is rated at 3,750 VACRMS. |