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ON Semiconductor
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Part | Category | Description |
|---|---|---|
ON Semiconductor | Integrated Circuits (ICs) | SELF-PROTECTED N-CHANNEL POWER MOSFET/ REEL |
ON Semiconductor 74AC32PCObsolete | Integrated Circuits (ICs) | IC GATE OR 4CH 2-INP 14MDIP |
ON Semiconductor | Discrete Semiconductor Products | IGBT, 360V, 27A, 1.32V, 320MJ, TO-262<BR>ECOSPARK® I, N-CHANNEL IGNITION |
ON Semiconductor FAN1655MTFXObsolete | Integrated Circuits (ICs) | IC REG CTRLR DDR 1OUT 16TSSOP |
ON Semiconductor FIN1027MObsolete | Integrated Circuits (ICs) | LVDS DRIVER, LVDS DIFFERENTIAL DRIVER, -40 °C, 85 °C, 3 V, 3.6 V, SOIC |
ON Semiconductor | Integrated Circuits (ICs) | PIPELINE REGISTER, 8-BIT PQCC28 |
ON Semiconductor SLV4HC4053ADWRGObsolete | Integrated Circuits (ICs) | LDO REGULATOR, ULTRA-LOW NOISE, |
ON Semiconductor | Isolators | OPTOCOUPLER, DIP, 6 PINS, 5 KV, NON ZERO CROSSING, 800 V, FOD4218 SERIES |
ON Semiconductor NVMFD5483NLT1GObsolete | Discrete Semiconductor Products | DUAL N-CHANNEL POWER MOSFET 60V, 24A, 36MΩ |
ON Semiconductor | Discrete Semiconductor Products | BIP NPN 8A 50V |
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
FGD3440G2_F085IGBT, 400V, 25A, 1.30V, 335mJ, DPAK<BR>EcoSPARK® II, N-Channel Ignition | Discrete Semiconductor Products | 1 | Active | IGBT, 400V, 25A, 1.30V, 335mJ, DPAK<BR>EcoSPARK® II, N-Channel Ignition |
FGD3N60LSDIGBT, 600V, 3A, 1.2V, DPAK, Planar | IGBTs | 1 | Obsolete | ON Semiconductor's Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses. The device is designed for applications where very low On-Voltage Drop is a required feature. |
FGH12040WD_F155IGBT, 1200 V, 40 A Field Stop Trench | IGBTs | 1 | Obsolete | Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2ndgeneration IGBTs offer the optimum performance for welder applications where low conduction and switching losses are essential. |
FGH20N60UFDIGBT, 650V, 20A, 2.2V, TO-247<BR>High Speed Field Stop | Single | 2 | Obsolete | Using novel field stop IGBT technology, ON Semiconductor’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential. |
FGH25T120SMDIGBT, 1200V, 25A Field Stop Trench | Transistors | 1 | Active | Using innovative field stop trench IGBT technology, ON Semiconductor’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications. |
FGH30N60LSDIGBT, 1500 V, 30 A Shorted-anode | Single IGBTs | 4 | Active | Using advanced field stop trench and shorted-anode technology, ON Semiconductor’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability. This device is designed for induction heating and microwave oven. |
FGH40N60SFIGBT, 600V, 40A, 2.3V, TO-247<BR>High Speed Field Stop | Transistors | 1 | Active | Using novel field stop IGBT technology, ON Semiconductor’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential. |
FGH40N60UFIGBT, 600V, 40A, Field Stop | Single IGBTs | 1 | Obsolete | Using novel field stop IGBT technology, ON Semiconductor’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential. |
FGH40T65SP_F085IGBT, 650V, 40A, 1.8V, TO-247<BR>Low VCE(ON) Field Stop | Single | 19 | Active | This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Ultra Field Stop Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on−state voltage and minimal switching loss. The IGBT iswell suited for UPS and solar applications. Incorporated into the deviceis a soft and fast co−packaged free wheeling diode with a low forwardvoltage. |
FGH4L40T120LQDIGBT, 1200V, 40A, Ultra Field Stop, Fast-switching Co-packed Diode. | Discrete Semiconductor Products | 1 | Active | The onsemi series of Ultra Field Stop IGBTs offers excellent switching losses for low conduction loss devices. This IGBT uses a fast switching co-packed diode making it ideal for use in hard-switching applications where EON, IRRM and trr are important factors determining the losses. This IGBT is available in a four lead TO247 package with a Kelvin emitter connection to allow further reduction of turn on losses. |