FGD3N60LSD Series

IGBT, 600V, 3A, 1.2V, DPAK, Planar

Catalog

IGBT, 600V, 3A, 1.2V, DPAK, Planar

Part	Power - Max [Max]	Mounting Type	Gate Charge	Current - Collector Pulsed (Icm)	Switching Energy	Supplier Device Package	Reverse Recovery Time (trr)	Voltage - Collector Emitter Breakdown (Max) [Max]	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Package / Case	Test Condition	Vce(on) (Max) @ Vge, Ic
ON Semiconductor FGD3N60LSDTM	40 W	Surface Mount	12.5 nC	25 A	1 mJ 250 µJ	TO-252AA	234 ns	600 V	600 ns	40 ns	DPAK (2 Leads + Tab) SC-63 TO-252-3	3 A 10 V 470 Ohm 480 V	1.5 V

Catalog

IGBT, 600V, 3A, 1.2V, DPAK, Planar

Key Features

• High Current Capability

• Very Low Saturation Voltage : VCE(sat)= 1.2 V at IC= 3 A

• High Input Impedance

Description

ON Semiconductor's Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses. The device is designed for applications where very low On-Voltage Drop is a required feature.