FGH40T65SP_F085 Series

IGBT, 650V, 40A, 1.8V, TO-247<BR>Low VCE(ON) Field Stop

Catalog

IGBT, 650V, 40A, 1.8V, TO-247<BR>Low VCE(ON) Field Stop

Part	Gate Charge	Vce(on) (Max) @ Vge, Ic	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector (Ic) (Max) [Max]	Package / Case	IGBT Type	Reverse Recovery Time (trr)	Test Condition	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Switching Energy	Supplier Device Package	Mounting Type	Current - Collector Pulsed (Icm)	Voltage - Collector Emitter Breakdown (Max)	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Grade	Qualification
ON Semiconductor FGH40T120SQDNL4	221 nC	1.95 V	-55 °C	175 ░C	160 A	TO-247-4	Trench Field Stop	166 ns	10 Ohm 15 V 40 A 600 V	1200 V	454 W	1.1 mJ 1.4 mJ	TO-247-4L	Through Hole
ON Semiconductor FGH40T65UQDF-F155	306 nC	1.67 V	-55 °C	175 ░C	80 A	TO-247-3	Trench Field Stop	89 ns	6 Ohm 15 V 40 A 400 V			310 µJ 989 µJ	TO-247-3	Through Hole	120 A	650 V	32 ns 271 ns
ON Semiconductor FGH40T65SPD-F155	35 nC	2.4 V	-55 °C	175 ░C	80 A	TO-247-3	Trench Field Stop	34 ns	6 Ohm 15 V 40 A 400 V		267 W	1.16 mJ 280 µJ	TO-247-3	Through Hole	120 A	650 V		37 ns	16 ns
ON Semiconductor FGH40N65UFDTU	120 nC	2.4 V	-55 °C	150 °C	80 A	TO-247-3	Field Stop	45 ns	10 Ohm 15 V 40 A 400 V		290 W	1.19 mJ 460 µJ	TO-247-3	Through Hole	120 A	650 V	24 ns 112 ns
ON Semiconductor FGH40N60SMD-F085		2.5 V	-55 °C	175 ░C	80 A	TO-247-3	Field Stop	47 ns	6 Ohm 15 V 40 A 400 V	600 V	349 W	300 µJ 920 µJ	TO-247-3	Through Hole	120 A			110 ns	18 ns	Automotive	AEC-Q101
ON Semiconductor FGH40T65SPD-F085	36 nC	2.4 V	-55 °C	175 ░C	80 A	TO-247-3	NPT		6 Ohm 15 V 40 A 400 V		267 W	1.16 mJ 270 µJ	TO-247-3	Through Hole	120 A	650 V			18 ns 35 ns	Automotive	AEC-Q101
ON Semiconductor FGH40T120SMD		2.4 V	-55 °C	175 ░C	80 A	TO-247-3	Trench Field Stop	65 ns	10 Ohm 15 V 40 A 600 V	1200 V	555 W	1.1 mJ 2.7 mJ	TO-247-3	Through Hole					40 ns 475 ns
ON Semiconductor FGH40T120SMDL4		2.4 V	-55 °C	175 ░C	80 A	TO-247-4	Trench Field Stop	65 ns	10 Ohm 15 V 40 A 600 V	1200 V	555 W	1.02 mJ 2.24 mJ	TO-247-4	Through Hole					44 ns 464 ns
ON Semiconductor FGH40T65SH-F155	72.2 nC	2.1 V	-55 °C	175 ░C	80 A	TO-247-3	Trench Field Stop		6 Ohm 15 V 40 A 400 V		268 W	1.01 mJ 297 µJ	TO-247-3	Through Hole	120 A	650 V	19.2 ns 65.6 ns
ON Semiconductor FGH40N6S2D	35 nC	2.7 V	-55 °C	150 °C	75 A	TO-247-3		48 ns	3 Ohm 15 V 20 A 390 V	600 V	290 W	115 µJ 195 µJ	TO-247-3	Through Hole	180 A			35 ns	8 ns

Catalog

IGBT, 650V, 40A, 1.8V, TO-247<BR>Low VCE(ON) Field Stop

Key Features

• Maximum Junction Temperature: TJ= 175°C

• Positive Temperature Co-efficient for Easy Parallel Operating

• High Current Capability

• Low Saturation Voltage: VCE(sat)= 1.33 V ( Typ.) @ IC= 40 A

• 100% of the Parts tested for ILM(1)

• High Input Impedance

• Tighten Parameter Distribution

• RoHS Compliant

• Low Conduction Loss Design for Soft Switching Application

Description

This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Ultra Field Stop Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on−state voltage and minimal switching loss. The IGBT iswell suited for UPS and solar applications. Incorporated into the deviceis a soft and fast co−packaged free wheeling diode with a low forwardvoltage.