FGH12040WD_F155 Series

IGBT, 1200 V, 40 A Field Stop Trench

Catalog

IGBT, 1200 V, 40 A Field Stop Trench

Part	Current - Collector (Ic) (Max) [Max]	Current - Collector Pulsed (Icm)	Power - Max [Max]	Vce(on) (Max) @ Vge, Ic	Switching Energy	Supplier Device Package	Test Condition [custom]	Test Condition [custom]	Test Condition [custom]	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Reverse Recovery Time (trr)	Td (on/off) @ 25°C	Gate Charge	Mounting Type	IGBT Type	Package / Case
ON Semiconductor FGH12040WD-F155	80 A	100 A	428 W	2.9 V 15 V 40 A	1 mJ 4.1 mJ	TO-247-3	23 Ohm	15 V 600 V	40 A	-55 °C	175 ░C	1200 V	71 ns	45 ns 560 ns	226 nC	Through Hole	Trench Field Stop	TO-247-3

Catalog

IGBT, 1200 V, 40 A Field Stop Trench

Key Features

• Maximum Junction Temperature : TJ= 175°C

• Positive Temperature Co-efficient for Easy Parallel Operating

• Low Saturation Voltage: VCE(sat)= 2.3 V ( Typ.) @ IC= 40

• 100% of The Parts Tested for ILM(1)

• Short Circuit Ruggedness > 5 us @ 150°C

• High Input Impedance

• RoHS Compliant

Description

Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2ndgeneration IGBTs offer the optimum performance for welder applications where low conduction and switching losses are essential.