FGH30N60LSD Series

IGBT, 1500 V, 30 A Shorted-anode

Catalog

IGBT, 1500 V, 30 A Shorted-anode

Part	Package / Case	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector Pulsed (Icm)	Power - Max [Max]	Mounting Type	Voltage - Collector Emitter Breakdown (Max)	Vce(on) (Max) @ Vge, Ic	IGBT Type	Gate Charge	Td (on/off) @ 25°C	Switching Energy	Test Condition	Td (on/off) @ 25°C	Voltage - Collector Emitter Breakdown (Max) [Max]	Reverse Recovery Time (trr)	Td (on/off) @ 25°C
ON Semiconductor FGH30S130P	TO-247-3	60 A	TO-247-3	-55 °C	175 ░C	90 A	500 W	Through Hole	1300 V	2.3 V	Trench Field Stop	78 nC
ON Semiconductor FGH30S150P	TO-247-3	60 A	TO-247-3	-55 °C	175 ░C	90 A	500 W	Through Hole	1500 V	2.4 V		369 nC	32 ns 492 ns	1.16 mJ 900 µJ	10 Ohm 15 V 30 A 600 V
ON Semiconductor FGH30N60LSDTU	TO-247-3	60 A	TO-247-3	-55 °C	150 °C	90 A	480 W	Through Hole		1.4 V		225 nC	18 ns	1.1 mJ 21 mJ	6.8 Ohm 15 V 30 A 400 V	250 ns	600 V	35 ns
ON Semiconductor FGH30N6S2D	TO-247-3	45 A	TO-247-3	-55 °C	150 °C	108 A	167 W	Through Hole		2.5 V		23 nC		55 µJ 100 µJ	10 Ohm 12 A 15 V 390 V		600 V	46 ns	6 ns 40 ns

Catalog

IGBT, 1500 V, 30 A Shorted-anode

Key Features

• High Speed Switching

• Low Saturation Voltage: VCE(sat)= 1.85 V @ IC= 30 A

• High Input Impedance

• RoHS Compliant

Description

Using advanced field stop trench and shorted-anode technology, ON Semiconductor’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability. This device is designed for induction heating and microwave oven.