FGH25T120SMD Series

IGBT, 1200V, 25A Field Stop Trench

Catalog

IGBT, 1200V, 25A Field Stop Trench

Part	Operating Temperature [Min]	Operating Temperature [Max]	Test Condition	Td (on/off) @ 25°C	Gate Charge	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Switching Energy	Current - Collector Pulsed (Icm)	Reverse Recovery Time (trr)	Current - Collector (Ic) (Max)	Mounting Type	Supplier Device Package	Package / Case	Vce(on) (Max) @ Vge, Ic	IGBT Type
ON Semiconductor FGH25T120SMD-F155	-55 °C	175 ░C	15 V 23 Ohm 25 A 600 V	40 ns 490 ns	225 nC	428 W	1200 V	0.56 mJ 1.74 mJ	100 A	60 ns	50 A	Through Hole	TO-247-3	TO-247-3	2.4 V	Trench Field Stop

Catalog

IGBT, 1200V, 25A Field Stop Trench

Key Features

• FS Trench Technology, Positive Temperature Coefficient

• High Speed Switching

• Low Saturation Voltage: VCE(sat) =1.8 V @ IC = 25 A

• 100% of The Parts Tested for ILM(1)

• High Input Impedance

• RoHS Compliant

Description

Using innovative field stop trench IGBT technology, ON Semiconductor’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications.