FGH4L40T120LQD Series

IGBT, 1200V, 40A, Ultra Field Stop, Fast-switching Co-packed Diode.

Catalog

IGBT, 1200V, 40A, Ultra Field Stop, Fast-switching Co-packed Diode.

Part	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce(on) (Max) @ Vge, Ic	IGBT Type	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Gate Charge	Power - Max [Max]	Mounting Type	Test Condition	Package / Case	Reverse Recovery Time (trr)	Switching Energy	Td (on/off) @ 25°C
ON Semiconductor FGH4L40T120LQD	-55 °C	175 ░C	1200 V	1.8 V	Trench Field Stop	TO-247-4L	80 A	227 nC	306 W	Through Hole	10 Ohm 15 V 40 A 600 V	TO-247-4	59 ns	1.04 mJ 1.35 mJ	42 ns 218 ns

Catalog

IGBT, 1200V, 40A, Ultra Field Stop, Fast-switching Co-packed Diode.

Key Features

• Low VCE(SAT) 1.55V at 40A

• EON 1.04mJ at 600V/40A

• EOFF 1.35mJ at 600V/40A

• IRRM 41.3A at 175C 1A/ns 40A

Description

The onsemi series of Ultra Field Stop IGBTs offers excellent switching losses for low conduction loss devices. This IGBT uses a fast switching co-packed diode making it ideal for use in hard-switching applications where EON, IRRM and trr are important factors determining the losses. This IGBT is available in a four lead TO247 package with a Kelvin emitter connection to allow further reduction of turn on losses.