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ON Semiconductor

Series	Category	# Parts	Status	Description

Part	Spec A	Spec B	Spec C	Spec D	Description

Standalone parts(10272)

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Part	Category	Description
ON Semiconductor NCV8402AMNWT1G	Integrated Circuits (ICs)	SELF-PROTECTED N-CHANNEL POWER MOSFET/ REEL
ON Semiconductor 74AC32PCObsolete	Integrated Circuits (ICs)	IC GATE OR 4CH 2-INP 14MDIP
ON Semiconductor FGI3236-F085	Discrete Semiconductor Products	IGBT, 360V, 27A, 1.32V, 320MJ, TO-262<BR>ECOSPARK® I, N-CHANNEL IGNITION
ON Semiconductor FAN1655MTFXObsolete	Integrated Circuits (ICs)	IC REG CTRLR DDR 1OUT 16TSSOP
ON Semiconductor FIN1027MObsolete	Integrated Circuits (ICs)	LVDS DRIVER, LVDS DIFFERENTIAL DRIVER, -40 °C, 85 °C, 3 V, 3.6 V, SOIC
ON Semiconductor TMC2111AR3C	Integrated Circuits (ICs)	PIPELINE REGISTER, 8-BIT PQCC28
ON Semiconductor SLV4HC4053ADWRGObsolete	Integrated Circuits (ICs)	LDO REGULATOR, ULTRA-LOW NOISE,
ON Semiconductor FOD4218V	Isolators	OPTOCOUPLER, DIP, 6 PINS, 5 KV, NON ZERO CROSSING, 800 V, FOD4218 SERIES
ON Semiconductor NVMFD5483NLT1GObsolete	Discrete Semiconductor Products	DUAL N-CHANNEL POWER MOSFET 60V, 24A, 36MΩ
ON Semiconductor 2SD1804S-TL-E	Discrete Semiconductor Products	BIP NPN 8A 50V

Series	Category	# Parts	Status	Description

FDY301NZN-Channel 2.5V Specified PowerTrench<sup>®</sup> MOSFET 20V, 0.2A, 5Ω	Single FETs, MOSFETs	1	Obsolete	This Single N-Channel MOSFET has been designed using an advanced Power Trench process to optimize the RDS(ON)@ VGS= 2.5V.
FDY302NZN-Channel 2.5V Specified PowerTrench<sup>®</sup> MOSFET 20V, 0.6A, 0.3Ω	Transistors	1	Obsolete	This Single N-Channel MOSFET has been designed using an advanced Power Trench process to optimize the RDS(ON)@ VGS= 2.5V.
FDY40	FETs, MOSFETs	2	Obsolete
FDZ1323NZCommon Drain N-Channel 2.5 V PowerTrench<sup>®</sup> WL-CSP MOSFET 20V, 10A, 13mΩ	FETs, MOSFETs	1	Active	This device is designed specifically as a single package solution for Li-Ion battery pack protection circuit and other ultra-portable applications. It features two common drain N-channel MOSFETs, which enables bidirectional current flow, on an advanced PowerTrench®process with state of the art"low pitch" WLCSP packaging process, the FDZ1323NZ minimizes both PCB space and rS1S2(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, lowgate charge and low rS1S2(on).
FDZ1827	Discrete Semiconductor Products	1	Active
FDZ1905PZCommon Drain P-Channel 1.5V PowerTrench<sup>®</sup> WL-CSP MOSFET -20V, -3A, 123mΩ	Transistors	1	Active	This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two common drain P-channel MOSFETs, which enables bidirectional current flow, on an advanced 1.5V PowerTrench®process with state of the art ¡°low pitch¡± WL-CSP packaging process, the FDZ1905PZ minimizes both PCB space and rS1S2(on). This advanced WL-CSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low rS1S2(on).
FDZ197PZP-Channel 1.5V Specified PowerTrench<sup>®</sup> Thin WL-CSP MOSFET -20V, -3.8A, 64mΩ	Single	6	Active	Designed on an advanced 1.5 V PowerTrench® process with state of the art "fine pitch" WLCSP packaging process, the FDZ197PZ minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low rDS(on).
FDZ20	Single FETs, MOSFETs	5	Obsolete
FDZ25	Discrete Semiconductor Products	3	Obsolete
FDZ29	Transistors	1	Obsolete