FDY302NZ Series

N-Channel 2.5V Specified PowerTrench® MOSFET 20V, 0.6A, 0.3Ω

Catalog

N-Channel 2.5V Specified PowerTrench® MOSFET 20V, 0.6A, 0.3Ω

Part	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Package / Case	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Technology	Vgs(th) (Max) @ Id	Supplier Device Package	Mounting Type
ON Semiconductor FDY302NZ	12 V	1.8 V 4.5 V	1.1 nC	625 mW	SC-89 SOT-490	N-Channel	-55 °C	150 °C	60 pF	600 mA	20 V	300 mOhm	MOSFET (Metal Oxide)	1.5 V	SC-89-3	Surface Mount

N-Channel 2.5V Specified PowerTrench® MOSFET 20V, 0.6A, 0.3Ω

• 600 mA, 20 V

• RDS(ON)= 300 mΩ @ VGS= 4.5 V

• RDS(ON)= 500 mΩ @ VGS= 2.5 V

• ESD Protection Diode (note 3)

• RoHS Compliant

This Single N-Channel MOSFET has been designed using an advanced Power Trench process to optimize the RDS(ON)@ VGS= 2.5V.