FDZ1323NZ Series

Common Drain N-Channel 2.5 V PowerTrench® WL-CSP MOSFET 20V, 10A, 13mΩ

Catalog

Common Drain N-Channel 2.5 V PowerTrench® WL-CSP MOSFET 20V, 10A, 13mΩ

Part	Rds On (Max) @ Id, Vgs	Mounting Type	Drain to Source Voltage (Vdss)	Power - Max [Max]	Configuration	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	FET Feature	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id
ON Semiconductor FDZ1323NZ	13 mOhm	Surface Mount	20 V	500 mW	2 N-Channel (Dual) Common Drain	6-XFBGA WLCSP	-55 °C	150 °C	MOSFET (Metal Oxide)	2055 pF	6-WLCSP (1.3x2.3)	Logic Level Gate	24 nC	10 A	1.2 V

Catalog

Common Drain N-Channel 2.5 V PowerTrench® WL-CSP MOSFET 20V, 10A, 13mΩ

Key Features

• Max rS1S2(on)= 13 mΩ at VGS= 4.5 V, IS1S2= 1 A

• Max rS1S2(on)= 13 mΩ at VGS= 4 V, IS1S2= 1 A

• Max rS1S2(on)= 13 mΩ at VGS= 3.8 V, IS1S2= 1 A

• Max rS1S2(on)= 16 mΩ at VGS= 3.7 V, IS1S2= 1 A

• Max rS1S2(on)= 16 mΩ at VGS= 3.1 V, IS1S2= 1 A

• Max rS1S2(on)= 18 mΩ at VGS= 2.5 V, IS1S2= 1 A

• Occupies only 3 mm2of PCB area

• Ultra-thin package: less than 0.35 mm height when mounted to PCB

• High power and current handling capability

• HBM ESD protection level > 3.6 kV (Note 3)

• RoHS Compliant

Description

This device is designed specifically as a single package solution for Li-Ion battery pack protection circuit and other ultra-portable applications. It features two common drain N-channel MOSFETs, which enables bidirectional current flow, on an advanced PowerTrench®process with state of the art"low pitch" WLCSP packaging process, the FDZ1323NZ minimizes both PCB space and rS1S2(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, lowgate charge and low rS1S2(on).