FDZ197PZ Series

P-Channel 1.5V Specified PowerTrench® Thin WL-CSP MOSFET -20V, -3.8A, 64mΩ

Catalog

P-Channel 1.5V Specified PowerTrench® Thin WL-CSP MOSFET -20V, -3.8A, 64mΩ

Part	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Power Dissipation (Max)	Mounting Type	Supplier Device Package	FET Type	Technology	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]
ON Semiconductor FDZ197PZ	25 nC	8 V	20 V	1.5 V 4.5 V	3.8 A	1570 pF	-55 °C	150 °C	6-UFBGA WLCSP	1.9 W	Surface Mount	6-WLCSP (1x1.5)	P-Channel	MOSFET (Metal Oxide)	1 V
ON Semiconductor FDZ193P		12 V	20 V	1.7 V 4.5 V	3 A	660 pF	-55 °C	150 °C	6-UFBGA WLCSP	1.9 W	Surface Mount	6-WLCSP (1x1.5)	P-Channel	MOSFET (Metal Oxide)	1.5 V	90 mOhm	10 nC
ON Semiconductor FDZ197PZ	25 nC	8 V	20 V	1.5 V 4.5 V	3.8 A	1570 pF	-55 °C	150 °C	6-UFBGA WLCSP	1.9 W	Surface Mount	6-WLCSP (1.0x1.5)	P-Channel	MOSFET (Metal Oxide)	1 V
ON Semiconductor FDZ191P_P		8 V	20 V	1.5 V 4.5 V	3 A	800 pF	-55 °C	150 °C	6-UFBGA WLCSP	1.9 W	Surface Mount	6-WLCSP (1x1.5)	P-Channel	MOSFET (Metal Oxide)	1.5 V		13 nC	85 mOhm
ON Semiconductor FDZ192NZ	17 nC		20 V		5.3 A	1220 pF	-55 °C	150 °C	6-UFBGA WLCSP		Surface Mount	6-WLCSP (1x1.5)	N-Channel	MOSFET (Metal Oxide)	1 V			39 mOhm
ON Semiconductor FDZ193P		12 V	20 V	1.7 V 4.5 V	3 A	660 pF	-55 °C	150 °C	6-UFBGA WLCSP	1.9 W	Surface Mount	6-WLCSP (1x1.5)	P-Channel	MOSFET (Metal Oxide)	1.5 V	90 mOhm	10 nC

Catalog

P-Channel 1.5V Specified PowerTrench® Thin WL-CSP MOSFET -20V, -3.8A, 64mΩ

Key Features

• Max rDS(on)= 64 mΩ at VGS= -4.5 V, ID= -2.0 A

• Max rDS(on)= 71 mmΩ at VGS= -2.5 V, ID= -2.0 A

• Max rDS(on)= 79 mmΩ at VGS= -1.8 V, ID= -1.0 A

• Max rDS(on)= 95 mmΩ at VGS= -1.5 V, ID= -1.0 A

• Occupies only 1.5 mm2of PCB area. Less than 50% of thearea of 2 x 2 BGA

• Ultra-thin package: less than 0.65 mm height when mountedto PCB

• HBM ESD protection level > 4.4 kV (Note 3)

• RoHS Compliant

Description

Designed on an advanced 1.5 V PowerTrench® process with state of the art "fine pitch" WLCSP packaging process, the FDZ197PZ minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low rDS(on).