FDZ1905PZ Series

Common Drain P-Channel 1.5V PowerTrench® WL-CSP MOSFET -20V, -3A, 123mΩ

Catalog

Common Drain P-Channel 1.5V PowerTrench® WL-CSP MOSFET -20V, -3A, 123mΩ

Part	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Power - Max [Max]	Rds On (Max) @ Id, Vgs	FET Feature	Configuration	Supplier Device Package	Mounting Type	Vgs(th) (Max) @ Id	Technology
ON Semiconductor FDZ1905PZ	-55 °C	150 °C	6-UFBGA WLCSP	900 mW	126 mOhm	Logic Level Gate	2 P-Channel	6-WLCSP (1x1.5)	Surface Mount	1 V	MOSFET (Metal Oxide)

Catalog

Common Drain P-Channel 1.5V PowerTrench® WL-CSP MOSFET -20V, -3A, 123mΩ

Key Features

• Max rS1S2(on)= 126mΩ at VGS= -4.5V, IS1S2= -1A

• Max rS1S2(on)= 141mΩ at VGS= -2.5V, IS1S2= -1A

• Max rS1S2(on)= 198mΩ at VGS= -1.8V, IS1S2= -1A

• Max rS1S2(on)= 303mΩ at VGS= -1.5V, IS1S2= -1A

• Occupies only 1.5 mm² of PCB area, less than 50% of the area of 2 x 2 BGA

• Ultra-thin package: less than 0.65 mm height when mounted to PCB

• High power and current handling capability

• HBM ESD protection level > 4 kV (Note 3)

• RoHS compliant

Description

This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two common drain P-channel MOSFETs, which enables bidirectional current flow, on an advanced 1.5V PowerTrench®process with state of the art ¡°low pitch¡± WL-CSP packaging process, the FDZ1905PZ minimizes both PCB space and rS1S2(on). This advanced WL-CSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low rS1S2(on).