| FETs, MOSFETs | 1 | Obsolete | |
FDWS5360L_F085N-Channel Power Trench<sup>®</sup> MOSFET 60V, 60A, 8.5mΩ | Discrete Semiconductor Products | 1 | Obsolete | N-Channel Power Trench®MOSFET 60 V, 60 A, 8.5 mΩ |
FDWS86068-F085N-Channel PowerTrench<sup>®</sup> MOSFET 100V, 80A, 4.5mΩ | FETs, MOSFETs | 1 | Active | Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. |
FDWS86368_F085N-Channel PowerTrench<sup>®</sup> MOSFET 80V, 80A, 4.5mΩ | Single | 1 | Active | Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. |
FDWS86369_F085N-Channel PowerTrench<sup>®</sup> MOSFET 80V, 65A, 7.5mΩ | Transistors | 1 | Active | Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. |
FDWS9420_F085N-Channel PowerTrench<sup>®</sup> MOSFET 40V, 20A, 5.8mΩ | Arrays | 2 | Obsolete | N-Channel PowerTrench®MOSFET 40 V, 20 A, 5.8 mΩ |
FDWS9508L_F085P-Channel PowerTrench<sup>®</sup> MOSFET -40V, -80A, 4.9mΩ | Single | 2 | Active | P-Channel PowerTrench®MOSFET -40 V, -80 A, 4.9 mΩ |
FDY1002PZDual P-Channel (-1.5 V) Specified PowerTrench<sup>®</sup> MOSFET -20V, -0.83A, 0.5Ω | FETs, MOSFETs | 1 | Active | This Dual P-Channel MOSFET has been designed using an advanced Power Trench process to optimize the rDS(on)@VGS= –1.5 V. |
FDY2000PZDual P-Channel Specified PowerTrench<sup>®</sup> MOSFET -20V, -0.35A, 1.2Ω | Discrete Semiconductor Products | 2 | Active | This Dual P-Channel MOSFET has been designed using an advanced Power Trench process to optimize the RDS(ON)@ VGS= - 2.5V. |
FDY300NZN-Channel 2.5V Specified PowerTrench<sup>®</sup> MOSFET 20V, 0.6A, 0.7Ω | Single FETs, MOSFETs | 1 | Obsolete | This Single N-Channel MOSFET has been designed using an advanced Power Trench process to optimize the RDS(ON)@ VGS= 2.5V. |