O
ON Semiconductor
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
Beta
⌘K
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Part | Category | Description |
|---|---|---|
 ON Semiconductor | Integrated Circuits (ICs) | SELF-PROTECTED N-CHANNEL POWER MOSFET/ REEL |
 ON Semiconductor 74AC32PCObsolete | Integrated Circuits (ICs) | IC GATE OR 4CH 2-INP 14MDIP |
 ON Semiconductor | Discrete Semiconductor Products | IGBT, 360V, 27A, 1.32V, 320MJ, TO-262<BR>ECOSPARK® I, N-CHANNEL IGNITION |
 ON Semiconductor FAN1655MTFXObsolete | Integrated Circuits (ICs) | IC REG CTRLR DDR 1OUT 16TSSOP |
 ON Semiconductor FIN1027MObsolete | Integrated Circuits (ICs) | LVDS DRIVER, LVDS DIFFERENTIAL DRIVER, -40 °C, 85 °C, 3 V, 3.6 V, SOIC |
 ON Semiconductor | Integrated Circuits (ICs) | PIPELINE REGISTER, 8-BIT PQCC28 |
ON Semiconductor SLV4HC4053ADWRGObsolete | Integrated Circuits (ICs) | LDO REGULATOR, ULTRA-LOW NOISE, |
 ON Semiconductor | Isolators | OPTOCOUPLER, DIP, 6 PINS, 5 KV, NON ZERO CROSSING, 800 V, FOD4218 SERIES |
 ON Semiconductor NVMFD5483NLT1GObsolete | Discrete Semiconductor Products | DUAL N-CHANNEL POWER MOSFET 60V, 24A, 36MΩ |
ON Semiconductor | Discrete Semiconductor Products | BIP NPN 8A 50V |
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
FDG6308PDual P-Channel 1.8V Specified PowerTrench<sup>®</sup> MOSFET -20 V, -0.6 A, 400 mΩ | FET, MOSFET Arrays | 1 | Obsolete | This P-Channel 1.8V specified MOSFET uses an advanced low voltage PowerTrench process. It has been optimized for battery power management applications. |
FDG6317NZDual 20V N-Channel PowerTrench® MOSFET, 0.7 A, 400 mΩ | FET, MOSFET Arrays | 1 | Active | This dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON)and gate charge (QG) in a small package. |
FDG6321CDual N & P Channel Digital FET 25V | Transistors | 1 | Obsolete | These dual N & P-Channel logic level enhancement mode field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values. |
FDG6322CDual N & P Channel Digital FET 25V | Discrete Semiconductor Products | 1 | Active | These dual N & P-Channel logic level enhancement mode field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values. |
FDG6323LIntegrated Load Switch | PMIC | 2 | Obsolete | This device is particularly suited for compact power management in portable electronic equipment where 2.5V to 8V input and 0.6A output current capability are needed. This load switch integrates a small N-Channel power MOSFET (Q1) which drives a large P-Channel power MOSFET (Q2) in one tiny SC70-6 package. |
FDG6324LIntegrated Load Switch | Power Management (PMIC) | 1 | Obsolete | This device is intended to be configured as a load switch and is particularly suited for compact computer peripheral switching applications where 3V to 20V input and 0.6A output current capability are needed. This device features a small N-Channel MOSFET (Q1) together with a large P-Channel Power MOSFET (Q2) in a single SC70-6 package. |
FDG6331LIntegrated Load Switch | Power Management (PMIC) | 1 | Obsolete | This device is particularly suited for compact power management in portable electronic equipment where 2.5V to 8V input and 0.8A output current capability are needed. This load switch integrates a small N-Channel power MOSFET (Q1) that drives a large P-Channel power MOSFET (Q2) in one tiny SC70-6 package. |
FDG6332C_F08520V N & P - Channel PowerTrench<sup>®</sup> MOSFET | FET, MOSFET Arrays | 3 | Active | The N & P-Channel MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP-8 and SSOP-6 packages are impractical. |
FDG8850NZDual N-Channel PowerTrench<sup>®</sup> MOSFET 30V, 0.75A, 0.4Ω | Transistors | 1 | Active | This dual N-Channel logic level enhancement mode field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values. |
| Interface | 1 | Obsolete | ||