FDG8850NZ Series

Dual N-Channel PowerTrench® MOSFET 30V, 0.75A, 0.4Ω

Catalog

Dual N-Channel PowerTrench® MOSFET 30V, 0.75A, 0.4Ω

Part	Drain to Source Voltage (Vdss)	Configuration	Technology	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Power - Max [Max]	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	FET Feature
ON Semiconductor FDG8850NZ	30 V	2 N-Channel (Dual)	MOSFET (Metal Oxide)	1.44 nC	Surface Mount	120 pF	6-TSSOP SC-88 SOT-363	300 mW	400 mOhm	750 mA	1.5 V	-55 °C	150 °C	SC-88 (SC-70-6)	Logic Level Gate

Catalog

Dual N-Channel PowerTrench® MOSFET 30V, 0.75A, 0.4Ω

Key Features

• Max rDS(on)= 0.4Ω at VGS= 4.5V, ID= 0.75A

• Max rDS(on)= 0.5Ω at VGS= 2.7V, ID= 0.67A

• Very low level gate drive requirements allowing operationin 3V circuits(VGS(th)<1.5V)

• Very small package outline SC70-6

• RoHS Compliant

Description

This dual N-Channel logic level enhancement mode field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.