FDG6308P Series

Dual P-Channel 1.8V Specified PowerTrench® MOSFET -20 V, -0.6 A, 400 mΩ

Catalog

Dual P-Channel 1.8V Specified PowerTrench® MOSFET -20 V, -0.6 A, 400 mΩ

Part	Package / Case	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Technology	Mounting Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Power - Max [Max]	FET Feature	Configuration	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id
ON Semiconductor FDG6308P	6-TSSOP SC-88 SOT-363	600 mA	153 pF	MOSFET (Metal Oxide)	Surface Mount	SC-88 (SC-70-6)	20 V	400 mOhm	300 mW	Logic Level Gate	2 P-Channel	-55 °C	150 °C	1.5 V

Catalog

Dual P-Channel 1.8V Specified PowerTrench® MOSFET -20 V, -0.6 A, 400 mΩ

Key Features

• –0.6 A, –20 V.

• RDS(ON)= 0.40Ω @ VGS = –4.5 V

• RDS(ON)= 0.55Ω @ VGS = –2.5 V

• RDS(ON)= 0.80Ω @ VGS = –1.8 V

• Low gate charge

• High performance trench technology for extremelylow RDS(ON)

• Compact industry standard SC70-6 surface mountpackage

Description

This P-Channel 1.8V specified MOSFET uses an advanced low voltage PowerTrench process. It has been optimized for battery power management applications.