FDG6317NZ Series

Dual 20V N-Channel PowerTrench® MOSFET, 0.7 A, 400 mΩ

Catalog

Dual 20V N-Channel PowerTrench® MOSFET, 0.7 A, 400 mΩ

Part	Rds On (Max) @ Id, Vgs	FET Feature	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Configuration	Mounting Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Power - Max [Max]	Drain to Source Voltage (Vdss)	Technology	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package
ON Semiconductor FDG6317NZ	400 mOhm	Logic Level Gate	700 mA	-55 °C	150 °C	2 N-Channel (Dual)	Surface Mount	1.5 V	66.5 pF	300 mW	20 V	MOSFET (Metal Oxide)	6-TSSOP SC-88 SOT-363	1.1 nC	SC-88 (SC-70-6)

Catalog

Dual 20V N-Channel PowerTrench® MOSFET, 0.7 A, 400 mΩ

Key Features

• 0.7A, 20V

• RDS(ON)= 400 mΩ @ VGS= 4.5V

• RDS(ON)= 500 mΩ @ VGS= 2.5V

• ESD protection diode (note 3)

• Low gate charge

• High performance trench technology for extremelylow RDS(ON)

• Compact industry standard SC70-6 surface mountpackage

Description

This dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON)and gate charge (QG) in a small package.