FDG6332C_F085 Series
20V N & P - Channel PowerTrench<sup>®</sup> MOSFET
Manufacturer: ON Semiconductor
Catalog
20V N & P - Channel PowerTrench<sup>®</sup> MOSFET
Key Features
• Q1 0.7A, 20VRDS(ON)= 300mΩ @ VGS= 4.5VRDS(ON)= 400mΩ @ VGS= 2.5V
• Q2 -0.6A, -20VRDS(ON)= 420mΩ @ VGS= -4.5VRDS(ON)= 630mΩ @ VGS= -2.5V
• Low gate charge
• High performance trench technology for extremely low RDS(ON)
• SC70-60 package: small footprint (51% smaller than SSOT-6); low profile (1mm thick)
• Qualified to AEC Q101
• RoHS Compliant
Description
AI
The N & P-Channel MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP-8 and SSOP-6 packages are impractical.