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ON Semiconductor
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| Series | Category | # Parts | Status | Description |
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| Part | Spec A | Spec B | Spec C | Spec D | Description |
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| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
FDC606PP-Channel PowerTrench<sup>®</sup> MOSFET,1.8V Specified, -12V, -6A, 26mΩ | Transistors | 1 | Active | This P-Channel 1.8V specified MOSFET uses a low voltage PowerTrench process. It has been optimized for battery power management applications. |
FDC608PZP-Channel PowerTrench<sup>®</sup> MOSFET, 2.5V Specified, -20V, -5.8A, 30mΩ | Single FETs, MOSFETs | 1 | Obsolete | This P-Channel 2.5V specified MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery power circuits, and DC/DC conversions. |
FDC610PZP-Channel PowerTrench<sup>®</sup> MOSFET, -30V, -4.9A, 42mΩ | FETs, MOSFETs | 1 | Active | This Channel MOSFET is produced using an advanced PowerTrench®process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery charging circuits, and DC/DC conversion. |
| Discrete Semiconductor Products | 1 | Obsolete | ||
FDC6302PDual P-Channel Digital FET -25V, -0.12A, 10Ω | FET, MOSFET Arrays | 1 | Active | These Dual P-Channel logic level enhancement mode field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switchimg applications. Since bias resistors are not required this one P-Channel FET can replace several digital transistors with different bias resistors like the IMBxA series. |
FDC6303NDual N-Channel Digital FET 25V, 0.68A, 0.45Ω | Transistors | 1 | Active | These dual N-Channel logic level enhancement mode field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications. Since bias resistors are not required this one N-Channel FET can replace several digital transistors with different bias resistors like the IMHxA series. |
FDC6304PDual P-Channel Digital FET -25V, -0.46A, 1.1Ω | FET, MOSFET Arrays | 2 | Active | These P-Channel enhancement mode field effect transistor are produced using a proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery power applications such as notebook computers and cellular phones. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts. |
FDC6305NDual N-Channel PowerTrench<sup>®</sup> MOSFET, 2.5V Specified, 20V, 2.7A, 80mΩ | Transistors | 1 | Active | These N-Channel low threshold 2.5V specified MOSFETs are produced using an advanced PowerTrench®process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. |
FDC6310PDual P-Channel PowerTrench<sup>®</sup> MOSFET, 2.5V Specified, -20V, -2.2A, 125mΩ | Transistors | 1 | Active | These P-Channel 2.5V specified MOSFETs are produced using an advanced PowerTrench®process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical. |
FDC6318PDual P-Channel PowerTrench<sup>®</sup> MOSFET, 1.8V specified, -12V, -2.5A, 90mΩ | Transistors | 1 | Active | These P-Channel 1.8V specified MOSFETs are produced using an advanced PowerTrench®process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. |
| Part | Category | Description |
|---|---|---|
 ON Semiconductor | Integrated Circuits (ICs) | SELF-PROTECTED N-CHANNEL POWER MOSFET/ REEL |
 ON Semiconductor 74AC32PCObsolete | Integrated Circuits (ICs) | IC GATE OR 4CH 2-INP 14MDIP |
 ON Semiconductor | Discrete Semiconductor Products | IGBT, 360V, 27A, 1.32V, 320MJ, TO-262<BR>ECOSPARK® I, N-CHANNEL IGNITION |
 ON Semiconductor FAN1655MTFXObsolete | Integrated Circuits (ICs) | IC REG CTRLR DDR 1OUT 16TSSOP |
 ON Semiconductor FIN1027MObsolete | Integrated Circuits (ICs) | LVDS DRIVER, LVDS DIFFERENTIAL DRIVER, -40 °C, 85 °C, 3 V, 3.6 V, SOIC |
 ON Semiconductor | Integrated Circuits (ICs) | PIPELINE REGISTER, 8-BIT PQCC28 |
ON Semiconductor SLV4HC4053ADWRGObsolete | Integrated Circuits (ICs) | LDO REGULATOR, ULTRA-LOW NOISE, |
 ON Semiconductor | Isolators | OPTOCOUPLER, DIP, 6 PINS, 5 KV, NON ZERO CROSSING, 800 V, FOD4218 SERIES |
 ON Semiconductor NVMFD5483NLT1GObsolete | Discrete Semiconductor Products | DUAL N-CHANNEL POWER MOSFET 60V, 24A, 36MΩ |
ON Semiconductor | Discrete Semiconductor Products | BIP NPN 8A 50V |