FDC6303N Series

Dual N-Channel Digital FET 25V, 0.68A, 0.45Ω

Catalog

Dual N-Channel Digital FET 25V, 0.68A, 0.45Ω

Part	Supplier Device Package	Mounting Type	Configuration	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs	FET Feature	Technology	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Package / Case
ON Semiconductor FDC6303N	SuperSOT™-6	Surface Mount	2 N-Channel (Dual)	1.5 V	-55 °C	150 °C	25 V	700 mW	2.3 nC	Logic Level Gate	MOSFET (Metal Oxide)	680 mA	50 pF	450 mOhm	SOT-23-6 Thin TSOT-23-6

Catalog

Dual N-Channel Digital FET 25V, 0.68A, 0.45Ω

Key Features

• 25 V, 0.68 A continuous, 2 A Peak

• RDS(ON)= 0.6 Ω @ VGS= 2.7 V

• RDS(ON)= 0.45 Ω @ VGS= 4.5 V

• Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th)< 1.5 V

• Gate-Source Zener for ESD ruggedness. >6kV Human Body Model

• Replace multiple NPN digital transistors (IMHxA series) with one DMOS FET

Description

These dual N-Channel logic level enhancement mode field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications. Since bias resistors are not required this one N-Channel FET can replace several digital transistors with different bias resistors like the IMHxA series.