FDC6305N Series

Dual N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 2.7A, 80mΩ

Catalog

Dual N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 2.7A, 80mΩ

Part	Drain to Source Voltage (Vdss)	Supplier Device Package	Package / Case	Current - Continuous Drain (Id) @ 25°C	Configuration	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Mounting Type	Technology	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor FDC6305N	20 V	SuperSOT™-6	SOT-23-6 Thin TSOT-23-6	2.7 A	2 N-Channel (Dual)	1.5 V	80 mOhm	Surface Mount	MOSFET (Metal Oxide)	310 pF	5 nC	700 mW	-55 °C	150 °C

Catalog

Dual N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 2.7A, 80mΩ

Key Features

• 2.7 A, 20 V

• RDS(on)= 0.08Ω @ VGS= 4.5V

• RDS(on)= 0.12Ω @ VGS= 2.5V

• Low gate charge (3.5nC typical)

• Fast switching speed

• High performance trench technology for extremelylow RDS(ON)

• SuperSOT™ -6 package: small footprint (72% smallerthan standard SO-8); low profile (1mm thick)

Description

These N-Channel low threshold 2.5V specified MOSFETs are produced using an advanced PowerTrench®process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.