FDC606P Series

P-Channel PowerTrench® MOSFET,1.8V Specified, -12V, -6A, 26mΩ

Catalog

P-Channel PowerTrench® MOSFET,1.8V Specified, -12V, -6A, 26mΩ

Part	Mounting Type	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Vgs(th) (Max) @ Id	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor FDC606P	Surface Mount	8 V	-55 °C	150 °C	6 A	MOSFET (Metal Oxide)	1699 pF	P-Channel	1.5 V	SuperSOT™-6	25 nC	26 mOhm	12 V	SOT-23-6 Thin TSOT-23-6	1.8 V 4.5 V

P-Channel PowerTrench® MOSFET,1.8V Specified, -12V, -6A, 26mΩ

-6 A, -12V

• RDS(on)= 26 mΩ@ VGS= -4.5 V

• RDS(on)= 35 mΩ@ VGS= -2.5 V

• RDS(on)= 53 mΩ@ VGS= -1.8 V

• Fast switching speed

• High power and current handling capability

This P-Channel 1.8V specified MOSFET uses a low voltage PowerTrench process. It has been optimized for battery power management applications.