FDC6318P Series

Dual P-Channel PowerTrench® MOSFET, 1.8V specified, -12V, -2.5A, 90mΩ

Catalog

Dual P-Channel PowerTrench® MOSFET, 1.8V specified, -12V, -2.5A, 90mΩ

Part	Technology	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Configuration	Package / Case	Mounting Type	Supplier Device Package	Power - Max [Max]	FET Feature
ON Semiconductor FDC6318P	MOSFET (Metal Oxide)	12 V	-55 °C	150 °C	1.5 V	8 nC	90 mOhm	455 pF	2 P-Channel	SOT-23-6 Thin TSOT-23-6	Surface Mount	SuperSOT™-6	700 mW	Logic Level Gate

Catalog

Dual P-Channel PowerTrench® MOSFET, 1.8V specified, -12V, -2.5A, 90mΩ

Key Features

-2.5A, -12VRDS(ON)= 90mΩ @ VGS= -4.5VRDS(ON)= 125mΩ @ VGS= -2.5VRDS(ON)= 200mΩ @ VGS= -1.8V

• High performance trench technology for extremely low RDS(ON)

• SuperSOT™-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick)

Description

These P-Channel 1.8V specified MOSFETs are produced using an advanced PowerTrench®process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.